Crack formation in tensile InGaAs/InP layers

Natali, M.; Salvador, D. De; Berti, M.; Drigo, A. V.; Lazzarini, L.; Salviati, G.; Rossetto, G.; Torzo, G.

doi:10.1116/1.1312263

Cited by 8 publications

(4 citation statements)

References 11 publications

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“…They are therefore extending down into the active layer region of the sample. Such features were also observed on In x Ga 1 À x As layers with x b 0.53 under tensile strain, grown on InP substrates [29,30]. This suggests that the overshooting in sample D exceeded the amount needed for complete strain compensation, thus creating a tensile strain in the QW region, as confirmed by X-Ray Diffraction (XRD) in the next section.…”

Section: Afm Measurementssupporting

confidence: 52%

Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

et al. 2005

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Section: Afm Measurementssupporting

confidence: 52%

Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

et al. 2005

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“…Although cracking in a tensile strained epitaxial layer was first reported in 1972 (Matthews and Klokholm, 1972), few studies have investigated the cracking mechanism. Only recently has cracking in III-V epitaxial layers attracted more attention, due to the increasing technological interest in growing highly strained structures (Dieguez et al, 1997;Wu and Weatherly, 1999;Murray et al, 2000;Natali et al, 2000).…”

Section: Introductionmentioning

confidence: 99%

Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate: Part I. Mathematical formulation

Lee¹,

Choi²,

Earmme³

2006

International Journal of Solids and Structures

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This paper presents an analysis of a single vertical crack and periodically distributed vertical cracks in an epitaxial film on a semi-infinite substrate where the cracks penetrate into the substrate. The film and substrate materials have different anisotropic elastic constants, necessitating Stroh formalism in the analysis. The misfit strain due to the lattice mismatch between the film and the substrate serves as the driving force for crack formation. The solution for a dislocation in an anisotropic trimaterial is used as a Green function, so that the cracks are modeled as the continuous distributions of dislocations to yield the singular integral equations of Cauchy-type. The Gauss-Chebyshev quadrature formula is adopted to solve the singular integral equations numerically. Energy arguments provide the critical condition for crack formation, at which the cracks are energetically favorable configurations, in terms of the ratio of the penetration depth into the substrate to the film thickness, the ratio of the spacing of the periodic cracks to the film thickness, and the generalized Dundurs parameters between the film and substrate materials.

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“…Only recently has cracking in III-V epitaxial layers attracted greater attention (Dieguez et al, 1997;Wu and Weatherly, 1999;Murray et al, 2000;Natali et al, 2000;Salviati et al, 2002). In one notable study, the critical thickness criterion based on an energy balance was used to predict the onset of cracking (Thouless, 1990).…”

Section: Introductionmentioning

confidence: 99%

Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate: Part II. Application to InxGa1−xAs/InP system

Lee

Choi

Earmme

2008

International Journal of Solids and Structures

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Cracking phenomena in tensile-strained In x Ga 1Àx As epitaxial film on an InP substrate are analyzed via the formulation given in Part I [Lee, S., Choi, S.T., Earmme, Y.Y., 2006. Analysis of vertical cracking phenomena in tensilestrained epitaxial film on a substrate: Part I. Mathematical formulation. International Journal of Solids and Structures 43, 3401-3413], where the solution for a dislocation in an anisotropic trimaterial is used as a fundamental solution and the crack is modeled by the continuous distribution of dislocations. Misfit strains and stresses are evaluated as a function of indium content x in an In x Ga 1Àx As/InP system. A single crack and periodic cracks, respectively, induced by the misfit stresses are considered. The crack opening profile, the crack mouth displacement, and the energy release rate as a function of the crack length are obtained. The critical conditions for a single crack and periodic cracks, respectively, are thus obtained, and are found to depend on the film thickness, the crack length, and the period of the cracks. The results of these analyses are also compared with published data obtained from experiments.

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Crack formation in tensile InGaAs/InP layers

Cited by 8 publications

References 11 publications

Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

Strain induced effects on the transport properties of metamorphic InAlAs/InGaAs quantum wells

Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate: Part I. Mathematical formulation

Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate: Part II. Application to InxGa1−xAs/InP system

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