Coupled electrothermal, electromagnetic, and physical modeling of microwave power FETs

Denis, D.; Snowden, C.M.; Hunter, I.C.

doi:10.1109/tmtt.2006.875797

Cited by 32 publications

(18 citation statements)

References 28 publications

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“…Thermal effects are modeled using a method similar to that previously published for Q2D simulations [16], and a simplified approach uses the average channel temperature T C rise, mean thermal resistance R TH and ambient temperature T 0 :…”

Section: B Transport Modelmentioning

confidence: 99%

Fast physical models for LDMOS power transistor characterization

Everett

Kearney

Johnson³

et al. 2011

2011 IEEE MTT-S International Microwave Symposium

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-A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction. It accurately predicts DC and microwave characteristics as demonstrated by comparison with measured DC characteristics, transconductance, forward gain, S 21 , and large-signal gate and drain charges for a LDMOS transistor. The model is fast, taking less than 30 ms to extract a 50 point DC I DS -V DS characteristic and less than 5 ms to produce S-parameters at a single frequency.Index Terms -Field Effect transistor (FET), laterally diffused MOS (LDMOS), quasi-two-dimensional (Q2D), transistor model.

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Section: B Transport Modelmentioning

confidence: 99%

Fast physical models for LDMOS power transistor characterization

Everett

Kearney

Johnson³

et al. 2011

2011 IEEE MTT-S International Microwave Symposium

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“…Apart from a few notable exceptions [1], [6]- [13], the internal operation of the packaged transistor is described only coarsely, and the voltages and currents are only available at a few nodes of interest, effectively obscuring the detailed internal operation of the packaged device. Because of this low number of internal nodes, we are limited in our ability to explain poor performance scaling [7], [14] as well as observed temperature distributions that are dependent on frequency, power, and load termination [6].…”

Section: Introductionmentioning

confidence: 99%

Multiphysics Modeling of RF and Microwave High-Power Transistors

Aaen¹,

Wood

Bridges³

et al. 2012

IEEE Trans. Microwave Theory Techn.

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Abstract-In this paper, we present a multi-physics approach for the simulation of high-power RF and microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze a laterally diffused metal-oxide semiconductor (LDMOS) transistor that has a total gate width of 102 mm and operates at 2.14 GHz. The transistor die is placed in a metal-ceramic package, with bondwire arrays connecting the die to the package leads. The effects of three different gate bondpad layouts on the transistor efficiency are studied. Through plots of the spatial distributions of the drain efficiency and the time-domain currents and voltages across the die, we reveal for the first time unique interactions between the electromagnetic effects of the layout and the microwave behaviour of the large-die LDMOS power field-effect transistor (FET).Index Terms-Global modeling, electrothermal, laterallydiffused metal-oxide-semiconductor (LDMOS) transistor, power field-effect transistor (FET).

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“…Instead, the electromagnetic model, thermal model, and nonlinear electrothermal transistor models are coupled using a circuit simulator to provide a comprehensive description of the transistor in a relatively compact simulation. Several researchers have presented such multi-physics approaches, in which the effects of the matching networks, distributed parasitics, and thermal environments have been studied [2]- [4].…”

Section: Introductionmentioning

confidence: 99%

Multi-physics modeling of high-power microwave transistors

Aaen¹,

Wood²,

Bridges³

et al. 2012

2012 IEEE/MTT-S International Microwave Symposium Digest

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Abstract-In this paper, we present a multi-physics approach for the simulation of high-power microwave transistors in which electromagnetic, thermal, and nonlinear transistor models are linked together within a harmonic-balance circuit simulator. This approach is used to analyze an LDMOS transistor operating at 2.14 GHz. The total gate width of the die is 102 mm, and the die is placed in a ceramic package and connected using bond-wire arrays at gate and drain. The effects of three different gate bondpad metallization on the transistor efficiency are studied. Plots of the spatial distribution of the drain efficiency, and time-domain current and voltage provide a unique insight and understanding of the behaviours induced by the different bond-pads.

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Coupled electrothermal, electromagnetic, and physical modeling of microwave power FETs

Cited by 32 publications

References 28 publications

Fast physical models for LDMOS power transistor characterization

Fast physical models for LDMOS power transistor characterization

Multiphysics Modeling of RF and Microwave High-Power Transistors

Multi-physics modeling of high-power microwave transistors

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