Coupled-Cavity Semiconductor Lasers

Agrawal, Govind P.; Dutta, Niloy K.

doi:10.1007/978-1-4613-0481-4_8

Cited by 2 publications

(1 citation statement)

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“…To calculate effective masses depending on the threshold energy (the minimum energy for the split-off hole in the CHHS Auger process), it is necessary to use the band structure obtained from the k.p model and the following relationship: 29 , 45 , 46 ET=[(2mH+mC)/(2mH+mC−mS(ET))](Eeff−ΔSo)…”

Section: Calculation Modelmentioning

confidence: 99%

Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode

Yahyazadeh

Hashempour

2023

J. Nanophoton.

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A numerical model was used to analyze the Auger coefficient in a c-plane InGaN/ GaN multiple-quantum-well laser diode (MQWLD) under hydrostatic pressure. Finite difference techniques were employed to acquire energy Eigenvalues and their corresponding Eigenfunctions of InGaN/GaN MQWLD, and the hole Eigenstates were calculated via a 6 × 6 k.p method under applied hydrostatic pressure. It was found that a change in pressure up to 10 GPa increases the carrier density in the quantum well and barriers and the effective band gap. Based on the result, the exaction binding energy decreased, the electric field rate increased up to 0.77 MV∕cm, and the Auger coefficient decreased down to 2.1 × 10 −31 and 0.6 × 10 −31 cm 6 s −1 in the MQW and barrier regions, respectively. Also, the calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the Auger coefficient. Our study provides more detailed insight into the origin of the Auger recombination rate drop under hydrostatic pressure in InGaN-based light-emitting diodes.

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