Countdown to perovskite space launch: Guidelines to performing relevant radiation-hardness experiments

Radiation-Tolerant Proton Detector Based on the MAPbBr3 Single Crystal

“…The diamond detector, which has been considered as the most radiation-tolerant detector, was reported to retain about 19% of the initial proton-induced current after being irradiated with 800 MeV protons at a dose of about 0.06 MGy . It is worth noting that the NIEL of the 800 MeV protons in the diamond is two orders of magnitude lower than that of 3 MeV protons in the MAPbBr 3 material, and therefore, much fewer displacement defects would be generated in diamond by 800 MeV protons . With these considerations, we conclude that the MAPbBr 3 detector has a remarkable radiation tolerance that outperforms the conventional semiconductor proton detectors.…”

“…12 It is worth noting that the NIEL of the 800 MeV protons in the diamond is two orders of magnitude lower than that of 3 MeV protons in the MAPbBr 3 material, and therefore, much fewer displacement defects would be generated in diamond by 800 MeV protons. 43 With these considerations, we conclude that the MAPbBr 3 detector has a remarkable radiation tolerance that outperforms the conventional semiconductor proton detectors.…”

“…The radiation tolerance is an important performance parameter for proton detectors. Generally, the incident energetic protons can transfer energy to the target material through nonionizing and ionizing energy loss (NIEL and IEL) mechanisms, and the NIEL can cause atom displacement and generate vacancy and interstitial defects, which can severely influence the detector performance . In this regard, the protons with 3 MeV energy are well suited to assess the detector radiation tolerance because the proton-induced defects are mostly inside the detector near the Bragg peak (Figure S4).…”

Low-intensity low-temperature analysis of perovskite solar cells for deep space applications

“…4,16 Higher energy particles, which many previous PSC tests have used due to their use in radiation tests for III-V and silicon cells, 20 could actually create localized healing and make tests less reliable. 4 Thus, Kirmani et al call for new lowenergy proton radiation tests, such as the ones performed in this study. We do observe some degradation in device performance after radiation, but analysis of a champion cell shows that it is possible for a PSC to retain a substantial portion of its pre-radiation efficiency compared to SOA space solar cells.…”

Effect of Electron and Proton Irradiation on Structural and Electronic Properties of Carbon Nanowalls

“…A prolonged exposure to ionizing radiation damages and ultimately destroys functional semiconductor materials in electronic devices, limiting their lifetime. − Irradiation exposure can cause chemical bonds within a material to break, altering their morphological and structural characteristics, which in turn can cause it to swell, polymerize, cause corrosion, cause quality loss, contribute to cracking, or otherwise change its desired mechanical, optical, or electronic properties. − Achieving high stability under intense ionizing irradiation is of great importance for many applications, ranging from nuclear power reactors to electronics for the emerging space industry. Satellites orbiting the Earth experience both electron and proton bombardment. − As scientific and commercial space missions have rapidly become more and more ambitious, the employed functional electronic materials have to meet growing requirements for their radiation resistance as well. A reliable operation in extreme environments with different types of ionizing radiation is a crucial prerequisite for the success of such missions.…”