Effect of Electron and Proton Irradiation on Structural and Electronic Properties of Carbon Nanowalls

Abstract

In this work, a complex experimental study of the effect of electron and proton ionizing radiation on the properties of carbon nanowalls (CNWs) is carried out using various state-of-the-art materials characterization techniques. CNW layers on quartz substrates were exposed to 5 MeV electron and 1.8 MeV proton irradiation with accumulated fluences of 7 × 1013 e/cm2 and 1012 p/cm2, respectively. It is found that depending on the type of irradiation (electron or proton), the morphology and structural properties of CNWs change; in particular, the wall density decreases, and the sp2 hybridization component increases. The morphological and structural changes in turn lead to changes in the electronic, optical, and electrical characteristics of the material, in particular, change in the work function, improvement in optical transmission, an increase in the surface resistance, and a decrease in the specific conductivity of the CNW films. Lastly, this study highlights the potential of CNWs as nanostructured functional materials for novel high-performance radiation-resistant electronic and optoelectronic devices.

Influence of gadolinium doping on structural properties of carbon nanotubes

“…The D band is associated with lattice disorder or finite-size effects [16]. The analysis of Raman spectra shows that the ratio of intensities of the G and D peaks (IG/ID) increases after Gd doping, which indicates a decrease in defects [17] in MWCNT. The 2D and D+G lines were determined as second-order overtones, the presence of which is characteristic of such structures.…”

Electron Irradiation-Induced Degradation of TiN Thin Films on Quartz and Sapphire Substrates

“…Presently, there are ongoing efforts to develop various radiation-resistant devices ,− and investigate the impact of ionizing radiation on material properties for practical applications in the space industry. ,,− Titanium nitride (TiN) stands out as a preferred and promising candidate for creating radiation-resistant optoelectronic devices in the space industry. ,,,, TiN boasts exceptional structural, thermal, chemical, electrical, optical, and mechanical properties, along with a wide band gap, making it successfully applicable in various fields of mechanical and electrical engineering. ,,, Accordingly, thin films of TiN can be used as conductive transparent layers in heterostructures, photodetectors, light-emitting diodes, and solar cells. ,− …”

“…16 Hence, comprehending the impact and finding ways to mitigate the effects of electrons and protons on semiconductor materials and devices become crucial elements for successful space exploration and the reliable operation of satellites in low Earth orbit. 2,10,13,16,17 Presently, there are ongoing efforts to develop various radiation-resistant devices 6,18−24 and investigate the impact of ionizing radiation on material properties for practical applications in the space industry. 17,20,25−31 Titanium nitride (TiN) stands out as a preferred and promising candidate for creating radiation-resistant optoelectronic devices in the space industry.…”

“…The predominant space weather threat to spacecraft in terms of cumulative damage effects originates from trapped electrons rather than solar protons . Hence, comprehending the impact and finding ways to mitigate the effects of electrons and protons on semiconductor materials and devices become crucial elements for successful space exploration and the reliable operation of satellites in low Earth orbit. ,,,, …”