Coulomb interactions in a low-voltage focussed ion beam system

Marianowski, Karin; Ohnweiler, T.; Plies, Erich

doi:10.1016/j.nima.2010.12.197

Cited by 5 publications

(5 citation statements)

References 6 publications

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“…In addition we have listed the following parameters and results: extraction potential ˚E X , potential of the drift space ˚D S , aperture at the target side ˛, average of the five measured bars d bar,meas , experimental probe size d probe,exp , and the simulated probe size d probe,theo for comparison. The values of d probe,theo are calculated as described in [24] using MONTEC [22] for simulating the CI and considering the actual parameters, e.g. length of drift space and beam current.…”

Section: Resultsmentioning

confidence: 99%

“…To provide safe results we used two different software packages [21,22]. The simulations [23,24] show that it is most important to realize a high drift space potential and a low working distance. In comparison, the internal acceleration mode operation and the overall column length (and hence the drift space length) are not so important.…”

Section: Ion Optical Columnmentioning

confidence: 99%

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Experimental results using an improved low-energy focussed ion beam column with booster principle and free-standing target

Marianowski

Ohnweiler

Plies

2014

Optik

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Section: Resultsmentioning

confidence: 99%

Section: Ion Optical Columnmentioning

confidence: 99%

Experimental results using an improved low-energy focussed ion beam column with booster principle and free-standing target

Marianowski

Ohnweiler

Plies

2014

Optik

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“…However, these conclusions are not suitable for the FIB system as the Coulomb repulsion forces among ions make the incident beam different from the ideal Gaussian distribution and this change will influence the sputtering performance accordingly [25,26]. Furthermore, FIB distributions are different under different beam energies and beam currents [27,28]. In order to guarantee the precision in FIB fabrication under different beam energies and beam currents, a new application-oriented model including aberrations and Coulomb repulsion forces was brought forward in simulating ion-solid interaction.…”

Section: Introductionmentioning

confidence: 99%

3-D SRIM Simulation of Focused Ion Beam Sputtering with an Application-Oriented Incident Beam Model

et al. 2019

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Ion beam sputter etching has been widely used in material surface modification and transmission electron microscope (TEM) sample preparation. Due to the complexity of the ion beam etching process, the quantitative simulation of ion beam sputtering is necessary to guarantee precision in surface treatment and sculpting under different energies and beam currents. In this paper, an application-oriented incident ion beam model was first built with aberrations and Coulomb repulsion forces being considered from the Ga ion source to the sample. The sputtering process of this model on the sample was then analyzed and simulated with an improved stopping and range of ions in matter (SRIM) program. The sputtering performance of this model, the point-like incident beam and the typical Gaussian incident beam was given in the end. Results show that the penetration depth of Ga ions having 30 keV energy in silicon is 28 nm and the radial range is 29.6 nm with 50 pA beam current. The application-oriented model has been verified by our focused ion beam-scanning electron microscopy (FIB-SEM) milling experiment and it will be a potential thermal source in simulating the process of FIB bombarding organic samples.

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“…Focused ion beam and its relative systems are versatile tools for nanoengineering and nanoscience applications. These systems complement conventional processing methods and can be used to prototype and modify a diverse range of nano-devices and sensors [1][2][3]. The quality and precision of FIB fabrication mainly depend on parameters of incident focused ion beam such as velocity, the spot, and the beam current density distribution.…”

Section: Introductionmentioning

confidence: 99%

“…As ion is much heavier than electron, Coulomb ion-ion interactions play an important role in the spot and beam current density [1][2]. Much attention was paid to Coulomb interactions in the Ga LMIS of FIB systems [1][2][3], as the current density at the tip reaches above 10 12 Am -2 . P. Kruit paid more attention to Coulomb interactions of two-lens FIB column under different imaging modes [4][5].…”

Section: Introductionmentioning

confidence: 99%

Coulomb Interactions in a Focused Ion Beam System with a Dynamic Corrected Deflection Field

Li¹,

Liu

2015

Proceedings of the 3rd International Conference on Mechatronics and Industrial Informatics

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Focused ion beam systems complement conventional processing methods and can be used to prototype and modify a diverse range of nano-devices and sensors. Controllable incident focused ion beam is difficult to obtain due to Coulomb interactions among ions. In this paper, Coulomb interactions of a practical FIB system with a dynamic corrected deflection field are obtained through solving Newton-Lorentz equations in three-dimension (3D). Firstly, the principle of the dynamic correction is analyzed and its 3D realization is given. Secondly, the principle of N-body Monte Carlo method is researched in detail before the source parameter, the 3D field, and the number of N are determined. In the end, the equations are solved by fifth-order Runge-Kutta algorithm and 3D ion trajectory is given for a 30kV FIB through the Mebs software. Simulation results coincide to the experimental those from our Canion 31 + system.

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Coulomb interactions in a low-voltage focussed ion beam system

Cited by 5 publications

References 6 publications

Experimental results using an improved low-energy focussed ion beam column with booster principle and free-standing target

Experimental results using an improved low-energy focussed ion beam column with booster principle and free-standing target

3-D SRIM Simulation of Focused Ion Beam Sputtering with an Application-Oriented Incident Beam Model

Coulomb Interactions in a Focused Ion Beam System with a Dynamic Corrected Deflection Field

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