Coulomb free energy for single-electron interface trapping in sub-μm MOSFETs

Mueller, H. H.; Wörle, D.; Schulz, M.

doi:10.1016/0167-9317(93)90153-v

Cited by 2 publications

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“…As we can see from Figure , τ e does not depend on the current, and thus based on eq we can assume that σ p does not depend on gate voltage. The deviation of τ c behavior from Shockley–Read–Hall model is caused by the Coulomb blockade energy, Δ E , which is inversely proportional to the logarithm of the carrier density . This energy is the difference between free energy of the trap in charged and uncharged state.…”

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“…The deviation of τ c behavior from Shockley−Read−Hall model is caused by the Coulomb blockade energy, ΔE, which is inversely proportional to the logarithm of the carrier density. 39 This energy is the difference between free energy of the trap in charged and uncharged state. By decreasing the effective area of the channel to tens of nanometers and below, the influence of the Coulomb blockade effect may be increased dramatically due to the quantization of carriers 40 in the channel of liquid-gated FETs.…”

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Sensitivity Enhancement of Si Nanowire Field Effect Transistor Biosensors Using Single Trap Phenomena

Pud

Petrychuk

et al. 2014

Nano Lett.

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Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.

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