Coulomb Explosions in a Metallic Glass Due to the Passage of Fast Heavy Ions?

Klaumünzer, S.; Hou, Ming; Schumacher, G.

doi:10.1103/physrevlett.57.850

Cited by 219 publications

(62 citation statements)

References 8 publications

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“…A stress-driven deformation of the SiO 2 matrix due to SHII-induced in-plane strain perpendicular to the ion beam direction has also been suggested as a potential elongation mechanism [107]. The latter leads to the well known "ion hammering" effect [108,109] causing the anisotropic expansion of both bulk SiO 2 [95,110] and colloidal SiO 2 [111,112] perpendicular to the incident beam. The lack of NP elongation in the absence of a sufficiently thick surrounding matrix, as shown by Penninkhof et al [113], supports this theory.…”

Section: Introductionmentioning

confidence: 99%

Ion Beam Formation and Modification of Cobalt Nanoparticles

Sprouster

Ridgway

2012

Applied Sciences

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This article reviews the size-dependent structural properties of ion beam synthesized Co nanoparticles (NPs) and the influence of ion irradiation on the size, shape, phase and structure. The evolution of the aforementioned properties were determined using complementary laboratory-and advanced synchrotron-based techniques, including cross-sectional transmission electron microscopy, small-angle X-ray scattering and X-ray absorption spectroscopy. Combining such techniques reveals a rich array of transformations particular to Co NPs. This methodology highlights the effectiveness of ion implantation and ion irradiation procedures as a means of fine tuning NP properties to best suit specific technological applications. Furthermore, our results facilitate a better understanding and aid in identifying the underlying physics particular to this potentially technologically important class of nanomaterials.

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Section: Introductionmentioning

confidence: 99%

Ion Beam Formation and Modification of Cobalt Nanoparticles

Sprouster

Ridgway

2012

Applied Sciences

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“…However, it is important to note that our low-fluence (<5 × 10 11 ions/cm 2 ) experiments were designed to minimize ion track overlap. In contrast, a measurable deformation yield requires an incubation fluence 31 of ≈1 × 10 12 ions/cm 2 and is commonly characterized in the fluence range of (1-10) × 10 14 ions/cm 2 , where incoming ions are incident on material already subjected to hundreds or thousands of ion impacts. 3 As a consequence, the material is, overall, modified at the onset of deformation and conceivably compacted when taking into account the net densification in a single ion track.…”

Section: MD Simulationsmentioning

confidence: 99%

Latent ion tracks in amorphous silicon

et al. 2013

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We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.

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“…These reactions occur at a lower temperature due to the combined effects of SHI irradiation and temperature. The initial phases to form in the annealed samples was found by RBS Two models exists which qualitatively explain the interface intermixing induced by energy transfer from SHI irradiation, these are the thermal spike [14] and the Coulomb explosion models [15]. According to the thermal spike model, incident ions lose energy predominantly by electronic excitation and ionization of the target atoms.…”

Section: Resultsmentioning

confidence: 99%

Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

Njoroge

Theron

Skuratov

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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The solid-state reactions between Pd thin films and 6H-SiC substrates induced by thermal annealing, room temperature swift heavy ion (SHI) irradiation and high temperature SHI irradiation have been investigated by in situ and real-time Rutherford backscattering spectrometry (RBS) and Grazing incidence X-ray diffraction (GIXRD). At room temperature, no silicides were detected to have formed in the Pd/SiC samples. Two reaction growth zones were observed in the samples annealed in situ and analysed by real time RBS. The initial reaction growth region led to formation of Pd 3 Si or (Pd 2 Si+Pd 4 Si) as the initial phase(s) to form at a temperature of about 450 °C. Thereafter, the reaction zone did not change until a temperature of 640 °C was attained where Pd 2 Si was observed to form in the reaction zone. Pd/SiC interface was analysed by RBS and no SHI induced diffusion was observed for room temperature irradiations. The sample irradiated at 400 °C, SHI induced diffusion was observed to occur accompanied with the formation of Pd 4 Si, Pd 9 Si 2 and Pd 5 Si phases which were identified by GIXRD analysis.

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Coulomb Explosions in a Metallic Glass Due to the Passage of Fast Heavy Ions?

Cited by 219 publications

References 8 publications

Ion Beam Formation and Modification of Cobalt Nanoparticles

Ion Beam Formation and Modification of Cobalt Nanoparticles

Latent ion tracks in amorphous silicon

Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

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