2019
DOI: 10.1016/j.corsci.2018.10.027
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Corrosion of Si, C, and SiC in molten salt

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Cited by 29 publications
(20 citation statements)
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“…Even for surfaces that are C-terminated, Si is dissolved first after it has segregated to the surface through a number of swapping reactions. These swapping reactions and Si segregation were previously reported during corrosion of SiC in molten salts [12], which means that this might be a common mechanism for corrosion of multi-component ceramics where one species is significantly more reactive than another.…”
Section: Discussionsupporting
confidence: 69%
See 1 more Smart Citation
“…Even for surfaces that are C-terminated, Si is dissolved first after it has segregated to the surface through a number of swapping reactions. These swapping reactions and Si segregation were previously reported during corrosion of SiC in molten salts [12], which means that this might be a common mechanism for corrosion of multi-component ceramics where one species is significantly more reactive than another.…”
Section: Discussionsupporting
confidence: 69%
“…These results suggest that the observed pitting corrosion on the SiC surface may be a transient phenomenon and the corrosion could eventually move toward more uniform degradation of the surface. It is interesting to point out that the observed dissolution of carbon-rich region in high temperature water is in contrast to corrosion of SiC in molten salt environments, where a carbon-rich layer forms and remains on the surface as a potentially protective layer for continued corrosion [12]. It remains to be determined to what extent the carbon-rich region provides a passive protection to SiC during hydrothermal environment.…”
Section: Introductionmentioning
confidence: 98%
“…In the multilayer samples, all these SiC, TiC, and Ti 3 SiC 2 crystals coexist, and in this case, the chemical potentials of Si, C, and Ti were determined from the following relations: μ SiC = μ Si + μ C , μ TiC = μ Ti + μ C , and μ Ti 3 SiC 2 = 3μ Ti + μ Si + 2μ C . We have taken μ Si = − 5.68 eV, μ Ti = − 9.36 eV, and μ C = − 9.39 eV, following ( 11 , 48 ). Last, the diffusion pathways and migration energy barriers for defects were determined by the climbing-image nudged elastic band (CI-NEB) method ( 49 ) (typically with five images).…”
Section: Methodsmentioning
confidence: 99%
“…There is limited data on corrosion behavior of SiC in sCO 2 [65][66][67][68][69][70]. Sridharan et al [68] reported minimal mass gain after an initial mass loss for SiC after exposure for 1000h in research grade sCO 2 at 750°C.…”
Section: Corrosion In Scomentioning
confidence: 99%