Correlation Study on the Low-dielectric Characteristics of SiOC(-H) Thin Film from a BTMSM/O2 Precursor

kim, jongwook; Kim, Hong Bae; Hwang, Chang-Su

doi:10.3938/jkps.56.89

Cited by 5 publications

(3 citation statements)

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“…A weak feature in the Si 2p spectrum of the non-irradiated site ( Figure 6A) can be seen around BE=102.7 eV. This feature has been reported to originate from the Si-(OCH 3 ) x bond 34 . The atomic concentration of this compound has been estimated at 0.7%, which is slightly underestimated due to the relatively small (60°) take-off angle (TOF) applied while collecting XPS data.…”

Section: Representative Resultsmentioning

confidence: 86%

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Liu

Moumanis

Dubowski

2015

JoVE

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The wettability of silicon (Si) is one of the important parameters in the technology of surface functionalization of this material and fabrication of biosensing devices. We report on a protocol of using KrF and ArF lasers irradiating Si (001) samples immersed in a liquid environment with low number of pulses and operating at moderately low pulse fluences to induce Si wettability modification. Wafers immersed for up to 4 hr in a 0.01% H 2 O 2 /H 2 O solution did not show measurable change in their initial contact angle (CA) ~75°. However, the 500-pulse KrF and ArF lasers irradiation of such wafers in a microchamber filled with 0.01% H 2 O 2 /H 2 O solution at 250 and 65 mJ/cm 2 , respectively, has decreased the CA to near 15°, indicating the formation of a superhydrophilic surface. The formation of OH-terminated Si (001), with no measurable change of the wafer's surface morphology, has been confirmed by X-ray photoelectron spectroscopy and atomic force microscopy measurements. The selective area irradiated samples were then immersed in a biotin-conjugated fluorescein-stained nanospheres solution for 2 hr, resulting in a successful immobilization of the nanospheres in the non-irradiated area. This illustrates the potential of the method for selective area biofunctionalization and fabrication of advanced Si-based biosensing architectures. We also describe a similar protocol of irradiation of wafers immersed in methanol (CH 3 OH) using ArF laser operating at pulse fluence of 65 mJ/cm 2 and in situ formation of a strongly hydrophobic surface of Si (001) with the CA of 103°. The XPS results indicate ArF laser induced formation of Si-(OCH 3 ) x compounds responsible for the observed hydrophobicity. However, no such compounds were found by XPS on the Si surface irradiated by KrF laser in methanol, demonstrating the inability of the KrF laser to photodissociate methanol and create -OCH 3 radicals. Video LinkThe video component of this article can be found at

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Section: Representative Resultsmentioning

confidence: 86%

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Liu

Moumanis

Dubowski

2015

JoVE

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“…The pinning between ferroelectric and antiferromagnetic domains is a known phenomenon, it has been observed experimentally [1][2][3][4][5][6][7][8][9][10] and described theoretically [3,4,[9][10][11][12][13][14] in a number of multiferroics. The origin of domain wall coupling remains under discussion.…”

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confidence: 99%

Pinning of magnetic domain walls in multiferroics

Gareeva

Zvezdin

2010

EPL

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PACS 77.55.Nv -Multiferroic/magnetoelectric films PACS 75.60.Ch -Domain walls and domain structures AbstractThe behavior of antiferromagnetic domain wall (ADW) against the background of a periodic ferroelectric domain structure has been investigated. It has been shown that the structure and the energy of ADW change due to the interaction with a ferroelectric domain structure. The ferroelectric domain boundaries play the role of pins for magnetic spins, the spin density changes in the vicinity of ferroelectric walls. The ADW energy becomes a periodical function on a coordinate which is the position of ADW relative to the ferroelectric domain structure. It has been shown that the energy of the magnetic domain wall attains minimum values when the center of the ADW coincides with the ferroelectric wall and the periodic ferroelectric structure creates periodic coercitivity for the ADW. The neighbouring equilibrium states of the ADW are separated by a finite potential barrier.

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“…1. 서 론 1) 최근 반도체 관련 VLSI에서 공정미세화에 따라 심각하게 장애를 발생시킬 수 있는 누화잡음을 제 거하여 낮은 기생저항을 얻는 방안으로, 기존에 사 용하는 유전상수가 3.7 정도인 SiO2절연막 보다 더 낮은 유전상수인 유무기화합물 형태의 SiOCH 절 연박막에 대한 연구를 진행하고 있다 [1,2]. 고구동 트랜지스터를 실현하기 위해 게이트 절연막은 낮 은 기생저항이 요구되며, 후고정에서 높은 신뢰성 의 다층배선 공정 실현이 가능한 높은 기대의 전…”

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A Study of Optical Characteristics Correlated with Low Dielectric Constant of SiOCH Thin Films Through Ellipsometry

Park¹

2010

Journal of the Korean Institute of Electrical and Electronic Ma

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We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

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Correlation Study on the Low-dielectric Characteristics of SiOC(-H) Thin Film from a BTMSM/O2 Precursor

Cited by 5 publications

References 0 publications

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment

Pinning of magnetic domain walls in multiferroics

A Study of Optical Characteristics Correlated with Low Dielectric Constant of SiOCH Thin Films Through Ellipsometry

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