Correlation of the 755–778 cm−1 Raman mode with oxygen vacancies in tin oxide nanostructures

Electrochemical Stability of Fluorine Doped Tin Oxide (FTO) Coating at Different pH Conditions

“…57 The appearance of IR active peaks was also attributed to the presence of oxygen vacancies in the FTO that changed the polarizability of the film and converted the IR active vibrational mode to being Raman active. Liu et al 58 correlated the peak at 755-778 cm −1 with oxygen vacancies. Yu et al 59 assigned the peaks at 566 and 788 cm −1 to the stretching of amorphous Sn-O bonding.…”

Unveiling the nature of room-temperature-fabricated p-type SnO thin films: the critical role of intermediate phases, lattice disorder, and oxygen interstitials

“…The prominent peaks in the spectra are at around 110 cm −1 , corresponding to the breathing mode of SnO tetrahedra (E g ), and a broader peak at around 210 cm −1 , associated with the stretching mode of Sn–O bonds (A 1g ). 27,39,54 Additionally, peaks observed between these two at around 138 cm −1 and 176 cm −1 , typically correspond to the formation of Sn 3 O 4 -like intermediate phases. 31,55…”

“…The prominent peaks in the spectra are at around 110 cm À1 , corresponding to the breathing mode of SnO tetrahedra (E g ), and a broader peak at around 210 cm À1 , associated with the stretching mode of Sn-O bonds (A 1g ). 27,39,54 Additionally, peaks observed between these two at around 138 cm À1 and 176 cm À1 , typically correspond to the formation of Sn 3 O 4 -like intermediate phases. 31,55 The Raman spectra establish a strong correlation between the p-type mobility of SnO thin films and their phase composition.…”

Identification of surface oxygen vacancy-related phonon–plasmon coupling in TiO 2 single crystal

“…The binding energy of sample A had a deviation of 0.2 eV compared to sample B, which resulted in the existence of OVs that changed the charge distribution around titanium atoms. [19] Based on the method introduced to calculate the OVs in SnO 2 , [20,21] and according to the relationship between the binding energies of Ti 2p 3/2 level versus the valences of Ti from pure TiO 2−x , the OV in sample A was 0.77%. To clarify the existence of OVs, PL spectra were acquired from the two samples and shown in Fig.…”