Correlation of structural and optical properties in as-prepared and annealed Bi2Se3 thin films

Revealing the Substrate Dependent Ultrafast Phonon Dynamics in Bi2Se3 Thin Films

“…This particular mode at 252 cm −1 is due to selenium–selenium interaction and is known as H‐mode. [ 35,36 ] Thus, the oscillation in the reflectance spectra in SiO 2 is due to this H‐mode. Bismuth makes an interface with the oxide surface of the substrate, whereas SeSe makes a self‐interface, as seen in the Raman spectra at 252 cm −1 .…”

Relationship between Oxygen Defects and Properties of Scandium Oxide Films Prepared by Ion-Beam Sputtering

“…where α is the absorption coefficient, A is a constant, hν is photon energy, E g is the calculated band gap, and m is 1/2, 2 or 3/2, which depends on the nature of band gap: Direct, indirect or forbidden, respectively [30]. The absorption coefficient, α, is obtained using the following equation [31]:…”

Preparation and investigation of structure, optical, nonlinear optical and thermoelectric properties of Bi 2 Se 3 thin film

“…Bi 2 Se3 Thin films have been prepared using various techniques such electro deposition [12] and Successive Ionic Layer Absorption and Reaction (SILAR) 13] methods] .The structure of Bi 2 Se 3 thin films were studied [14][15][16][17][18][19][20], It was found that, these films had polycrystalline structure with rhombohedral structure of Bi 2 Se 3 [17][18], space group (R¯3m) (166) [20]. Optical properties of Bi2Se3 thin films were studied [21][22][23][24][25][26][27], It was found that, the energy gap was 1.51 [21], with range 1.4 -2.25 eV [22], 1.10 eV and decrease with annealing [23],1.25 eV decrease with substrate temperature [24], 1.22 eV decreased wit temperature [25]. the transmitted values increased with annealing [26], The Bi2Se3 thin films had a direct transitions [27].…”