Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides

Dumin, D.J.; Maddux, Jay R.

doi:10.1109/16.210209

Cited by 223 publications

(85 citation statements)

References 12 publications

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“…Early investigators of SILC in stressed oxides observed a transient component in the leakage current, that was attributed to charging and discharging of oxide traps [210][211][212][213][214] and was exploited to extract information on the oxide quality [215,216]. The detrapping current followed a 1/t dependence down to very short times [217], in agreement with tunneling models [218].…”

Section: Charge Detrappingsupporting

confidence: 52%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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Section: Charge Detrappingsupporting

confidence: 52%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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“…In a different study by Ramprasad,27 simultaneous contributions from multiple transport mechanisms was modeled for metal-insulator-metal capacitor systems, and both J-t and J-V (J is the current density) characteristics were predicted. The phenomenological theory used parameters typical for TaOx capacitors and oxide thickness of several hundred angstroms.…”

Section: -2?mentioning

confidence: 99%

Charged Particle Ejection from Nanolayered Heterostructures

Jacobs¹

2007

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“…18,19 The affected dielectrics were typically highquality thermal oxides with very low trap densities, 20,21 however, the SILC effect has also been observed in PECVD oxides. 22 The physical mechanism of the transient SILC effect has been modeled as the charging and discharging of border traps located within a few nm of metal-dielectric interfaces.…”

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confidence: 99%

“…21 Given that our devices are not exposed to such high field stresses ( 3 MV/cm) and that repeated measurements on MIM and MEMS devices have shown little change in the power-law exponent with charging bias, polarity, or temperature, we conclude that no new traps are generated in the oxide and that the transient current behavior and changes in pull-in voltage are due to the charging and discharging of existing border traps located close to the bottom metal dielectric interface. The charging and discharging of the border traps have been explained by both elastic 18,19 and inelastic tunneling processes. 21,26 According to the elastic tunneling front model 27 and assuming a uniform spatial distribution of traps, the trapped charge is assumed to be initially adjacent to the metal-dielectric interface and moving into the dielectric at the rate of approximately 0.2-0.4 nm per decade of time.…”

mentioning

confidence: 99%

“…19 For instance, it was shown that the exponent changes after a high-field (>5 MV/cm) stress which causes additional traps to be generated in the dielectric. 21 Given that our devices are not exposed to such high field stresses ( 3 MV/cm) and that repeated measurements on MIM and MEMS devices have shown little change in the power-law exponent with charging bias, polarity, or temperature, we conclude that no new traps are generated in the oxide and that the transient current behavior and changes in pull-in voltage are due to the charging and discharging of existing border traps located close to the bottom metal dielectric interface.…”

mentioning

confidence: 99%

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Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

Ryan

Olszewski

Houlihan

et al. 2015

Applied Physics Letters

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Dielectric charging at low electric fields is characterized on radio-frequency microelectromechanical systems (RF MEMS) capacitive switches. The dielectric under investigation is silicon dioxide deposited by plasma enhanced chemical vapor deposition. The switch membrane is fabricated using a metal alloy which is shown to be mechanically robust. In the absence of mechanical degradation, these capacitive switches are appropriate test structures for the study of dielectric charging in MEMS devices. Monitoring the shift and recovery of device capacitance-voltage characteristics revealed the presence of a charging mechanism which takes place across the bottom metal-dielectric interface. Current measurements on metal-insulator-metal devices confirmed the presence of interfacial charging and discharging transient currents. The field-and temperature-dependence of these currents is the same as the well-known transient stress-induced leakage current (SILC) observed in flash memory devices. A simple model was created based on established transient SILC theory which accurately fits the measured data and reveals that charge exchange at the bottom metal-dielectric interface is responsible for charging currents and pull-in voltage changes in these MEMS devices. (C) 2015 AIP Publishing LLC

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Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides

Cited by 223 publications

References 12 publications

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Charged Particle Ejection from Nanolayered Heterostructures

Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

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