Correlation between the response performance of epitaxial graphene/SiC UV-photodetectors and the number of carriers in graphene

Li, Yongming; Wang, Rongkun; Zuo, Zhiyuan; Ge, Lei; Chen, Xiufang; Xie, Xuejian; Xiao, Longfei; Yan, Peng; Xu, Xiangang

doi:10.1016/j.carbon.2021.07.052

Cited by 18 publications

(7 citation statements)

References 35 publications

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“…Accordingly, the rise time (τ r ) and the decay time (τ d ), which are defined as the time in which the dark current reaches 90% of the maximum photocurrent and vice versa down to 10%, are 0.52 and 0.88 s, respectively. It should be indicated that the response and recovery times are less than those in most of the reported works on SiC-based PDs. − …”

Section: Resultsmentioning

confidence: 97%

High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays

Wang

Chen

et al. 2023

ACS Appl. Mater. Interfaces

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Currently, the photodetectors (PDs) assembled by vertically aligned nanostructured arrays have attracted intensive interest owing to their unique virtues of low light reflectivity and rapid charge transport. However, in terms of the inherent limitations caused by numerous interfaces often existed within the assembled arrays, the photogenerated carriers cannot be effectively separated, thus weakening the performance of target PDs. Aiming at resolving this critical point, a high-performance ultraviolet (UV) PD with a single-crystal integrated self-supporting 4H-SiC nanohole arrays is constructed, which are prepared via the anode oxidation approach. As a result, the PD delivers an excellent performance with a high switching ratio (∼250), remarkable detectivity (6 × 1010 Jones), fast response (0.5 s/0.88 s), and excellent stability under 375 nm light illumination with a bias voltage of 5 V. Moreover, it has a high responsivity (824 mA/W), superior to those of most reported ones based on 4H-SiC. The overall high performance of the PDs could be mainly attributed to the synergistic effect of the SiC nanohole arrays’ geometry, a whole single-crystal integrated self-supporting film without interfaces, established reliable Schottky contact, and incorporated N dopants.

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Section: Resultsmentioning

confidence: 97%

High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays

Wang

Chen

et al. 2023

ACS Appl. Mater. Interfaces

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“…The metal-graphene-metal UV photodetector was achieved by fabrication of EG/SiC heterostructure on semi-insulating 4H-SiC, providing a reference for the design of other graphene/SiC heterostructure optoelectronic devices. [106] The EG/4H-SiC (Si face) heterostructure photodetector exhibited photogenerated electron transfer and then carrier recombination under illumination. The photogenerated electrons in SiC migrate to graphene under built-in electric field, where the carrier recombination occurs.…”

Section: Photodetectorsmentioning

confidence: 99%

“…Due to the dual modulation of optical and electric fields, the negative photoconductivity improved under negative gate voltage and normal photoconductivity facilitated under positive gate voltage. The metal-GN-metal UV photodetector was achieved by fabrication of EG/SiC heterostructure on semi-insulating 4H-SiC, providing a reference for the design of other GN/SiC heterostructure optoelectronic devices [106]. The EG/4H-SiC (Si face) heterostructure photodetector exhibited photogenerated electron transfer and then carrier recombination under illumination.…”

Section: Photodetectorsmentioning

confidence: 99%

Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

Liu

Fang

Yang

et al. 2022

J. Phys.: Condens. Matter

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Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps, interesting spin degrees of freedom, and variable crystal structures. They exhibit broad application prospects in micro-nano devices. In the meantime, the wide bandgap semiconductors (WBS) with an elevated breakdown voltage, high mobility, and high thermal conductivity have shown important applications in high-frequency microwave devices, high-temperature and high-power electronic devices. Beyond the study on single 2D materials or WBS materials, the multi-functional 2D/WBS heterostructures can promote the carrier transport at the interface, potentially providing novel physical phenomena and applications, and improving the performance of electronic and optoelectronic devices. In this review, we overview the advantages of the heterostructures of 2D materials and WBS materials, and introduce the construction methods of 2D/WBS heterostructures. Then, we present the diversity and recent progress in the applications of 2D/WBS heterostructures, including photodetectors, photocatalysis, sensors, and energy related devices. Finally, we put forward the current challenges of 2D/WBS heterostructures and propose the promising research directions in the future.

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“…The sensitive wavelength range of a detector is an important consideration in addition to its response characteristic. In previous research, the photodetector with a single graphene/WBS heterojunction usually exhibits a narrow UV response bandwidth, making it hard to detect wide range UV light. ,, Researchers have found that graphene can be epitaxially grown on the surface of SiC, which opens up a novel material system for photodetectors. , 4H-SiC has a bandgap of 3.26 eV and an excellent near UV response. , In order to broaden the UV detection range while maintaining acceptable conduction, combining the graphene SBJ with another WBS material to form a double Schottky heterojunction may be a promising option. Another p-type WBS material, nickel oxide (NiO), has recently been investigated and employed in power devices. − NiO has a bandgap of 3.7 eV, making it an excellent UV sensitive material.…”

Section: Introductionmentioning

confidence: 99%

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Chen

et al. 2022

ACS Appl. Electron. Mater.

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Based on a metal-oxide-semiconductor (MOS) structure, a double Schottky barrier junction (SBJ) made of NiO/graphene/4H-SiC is built and employed in ultraviolet (UV) detection. The hole concentration of NiO can be modulated as depleted or accumulated states with gate voltages, which allows the device to work in dual-mode when used as a photodetector. In this work, a negative gate bias causes the device to operate as a photoconductive detector with gain due to the negligible Schottky barrier, whereas a zero or positive gate bias makes it work as a Schottky photodiode. The device has a high responsivity of 103.3 A/W and a gain of 490.8 despite the low light intensity (261 nm laser @ 30.19 μW/cm 2 ) at V DS = 5 V and V GS = −3 V. The NiO layer and SiC substrate both serve as UV absorption materials and produce photogenerated carriers, and the device has a wide UV response range from 240 to 400 nm with a gain of 80.34 when V DS = −3 V and V GS = 0 V at 240 nm. The above findings suggest that this MOS-based NiO/graphene/4H-SiC double SBJ has a great prospect in practical UV detection.

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Correlation between the response performance of epitaxial graphene/SiC UV-photodetectors and the number of carriers in graphene

Cited by 18 publications

References 35 publications

High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays

High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays

Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

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