Correlation between the photoluminescence and chemical bonding in porous silicon

Dimova‐Malinovska, D.; Sendova‐Vassileva, M.; Marinova, Ts.; Krastev, V.; Kamenova, M.; Tzenov, N.

doi:10.1016/0040-6090(94)05652-t

Cited by 24 publications

(5 citation statements)

References 17 publications

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“…Samples of porous silicon of all series have shown the different intensity of a photoluminescence due to different power intensity of plasma flow and different deepness of the modified silicon layer. However all our plasma modified PS samples have demonstrated higher intensity of photoluminescence in comparison with the PS samples described in works [3,4]. The changes in PL spectra were registered one time in month across 4 months after anode etching.…”

Section: Resultsmentioning

confidence: 61%

“…So, silicon vertical nanocolumns and periodical strips were firstly etched. Formed sample morphologies were differed from usually prepared porous silicon surfaces [1][2][3][4]; therefore one can expect some unusual photoluminescence properties of such prepared PS samples.…”

Section: Resultsmentioning

confidence: 94%

“…The band gap value of about 2.3 -2.4 eV correspond to strong radiative direct interband transition in silicon nanopillars and nanowires. The bottom area of the porous silicon formed from plasma modified silicon is in less strain form, etching parameters do not change and therefore a PS layer has PL maximum at λ = 690 nm as for usual PS [2][3][4]. The intensity of the first peak with maximum at 500-520 nm is on two-three orders higher than the intensity of the second peak at 680 -700 nm.…”

Section: Resultsmentioning

confidence: 99%

“…In 1990 the phenomenon of a visible photoluminescence (PL) on a surface of porous silicon (PS) at room temperature was observed that indicates a change of electronic characteristics in a formed material: type of transition and width of band gap [2][3][4]. One of the factors influencing on intensity of a photoluminescence of porous silicon are the properties of primary silicon which is exposed to anode etching.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

Галкин¹,

Yan

Chusovitin³

et al. 2014

SSP

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Measurements of radiative properties of porous silicon after compression plasma treatment have been carried out. Significant increase of photoluminescence intensity and blue shift of spectra have been observed on studied samples in comparison with porous layers formed on monocrystalline silicon without preliminary plasma treatment. An influence of long storage of plasma modified porous silicon layer on the intensity and spectral composition of photoluminescence has been checked. A rise of PL intensity during first moth of storage and following decrease of PL intensity in the next three months has been observed. Mechanisms of changes in a spectral composition of PL and alterations of PL intensity during storage have been discussed.

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Section: Resultsmentioning

confidence: 61%

Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

Галкин¹,

Yan

Chusovitin³

et al. 2014

SSP

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“…These values are very close to those reported. 6,7 The presence of C could be related mainly to the C 2 H 5 OH in the electrolyte, although some absorption from the air is possible.…”

Section: Sample Preparationmentioning

confidence: 99%

Investigation of vibrational and photoluminescence spectra of nanocrystalline silicon by micro-Raman spectroscopy using various laser powers

Khôi

Tam

Duong

et al. 1999

J. Raman Spectrosc.

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The Raman spectra of silicon nanocrystals embedded in silicon oxide and in porous silicon were measured at various laser powers. It was found that the Si-Si stretching Raman peak shifts to lower wavenumbers and broadens when the laser power increases. The effect is significant and reversible, i.e. the peak returns to its former position when the laser power is decreased to the initial level. It was found that this reversible phenomenon is caused by an increase in bond length due to the heating effect of the laser. In addition, the appearance of weak bands on both sides of the main Si-Si stretching mode peak at 155, 332, 620, 940, 2087, 2114 and 2145 cm −1 was observed at high laser power. It was found that the first four bands could be attributed to one-and multi-phonon Raman scattering and the last three bands are the expected SiH 2 , SiH and SiH 3 stretching vibration modes. The photoluminescent spectrum was measured with the use of 1.959 eV illumination from an 11 mW helium-neon laser. It was found that the photoluminescence spectrum consists of a broad line centered at 1.79 eV with a full width at half-maximum of 0.21 eV and a tail located in an energy region higher than the laser incident excitation energy. Based on the analysis of Raman scattering spectra and the assumption that the luminescence spectrum arises from the ensemble of various sized particles distributed in the material, it is suggested that the later band of photoluminescence should be excited by the Raman scattering light in silicon nanocrystals.

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Excitons in Low-Dimensional Semiconductor Structures

Kalt

Klingshirn

2019

Graduate Texts in Physics

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Correlation between the photoluminescence and chemical bonding in porous silicon

Cited by 24 publications

References 17 publications

Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

Influence of Preliminary Plasma Processing on Luminescent Properties of Porous Silicon

Investigation of vibrational and photoluminescence spectra of nanocrystalline silicon by micro-Raman spectroscopy using various laser powers

Excitons in Low-Dimensional Semiconductor Structures

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