Correlation between the microstructure and optical properties of carbon nitride films deposited by rf magnetron sputtering

Durand-Drouhin, O.; Lejeune, Martine; Clin, M.; Henocque, J.

doi:10.1016/s1369-8001(00)00098-6

Cited by 9 publications

(4 citation statements)

References 6 publications

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“…In the case of the films grown using excited helium, the Si 2 p and N 1 s core levels are notably shifted to higher binding energies compared to the films grown using excited hydrogen. Moreover, the full width at half maximum (FWHM) of the Si 2 p peak is about 2.5 eV, which considerably exceeds that in Si 3 N 4 (1.79 eV) and SiC (1.84 eV) [7]. Therefore, the Si 2 p emission from those films consists of two components, related to different states of silicon atoms.…”

Section: Resultsmentioning

confidence: 93%

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Plasma Deposition and Properties of Silicon Carbonitride Films

et al. 2005

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A variety of advanced analytical techniques were used to characterize silicon carbonitride films grown from new volatile nitrogen-rich silyl derivatives of asymmetrical dimethylhydrazine: (CH 3 ) 2 HSiNHN(CH 3 ) 2 (DMDMSH) and Me 2 Si(NHNMe 2 ) 2 (bisDMHDMS). The results demonstrate that the films contain only Si-C, Si-N, and C( sp 3 )-N bonds, in relative amounts that depend on the molecular structure of the precursor and deposition conditions. The Si-C/[Si-N + C( sp 3 )-N] ratio is considerably larger in the films grown from DMDMSH. The data obtained by a variety of spectroscopic techniques provide solid evidence that some of the films contain C( sp 3 )-N bonds, characteristic of superhard materials, and that the films have a complex, framework structure, rather than being a mixture of Si 3 N 4 , SiC, and C 3 N 4 . The structure of the films depends on the N : Si ratio in the precursor: at N : Si = 2, the films are amorphous and contain nanocrystalline inclusions with a tetragonal structure; at N : Si = 4, the films are purely amorphous. The ability to control the chemical composition and structure of deposits allowed us to produce films with various physicochemical and electrical properties.

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Section: Resultsmentioning

confidence: 93%

“…As pointed out above, decomposition of the IR absorption band between 600 and 1200 cm -1 reveals a component peaked at 1030 cm -1 . Durand-Drouhin et al [7] assigned this emission to C(sp 3 )-N vibrations. Comparison with the spectrum of the precursor (Fig.…”

Section: Resultsmentioning

confidence: 99%

Plasma Deposition and Properties of Silicon Carbonitride Films

et al. 2005

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“…High resolution electron microscopy and selected area elec tron diffraction patterns do not allow one to observe the excess of the free carbon phase. First [61][62][63], the carbon phase is amorphous like and, consequently, gives the same projection of the potential as the amor phous SiC x N y matrix surrounding the carbon nanoc rystals; second, the ordered carbon regions are much smaller than the thickness of the foil (10-20 nm) irra diated with the electron beam. In the latter case, the presence of well ordered graphite inclusions is not necessarily visible in the HREM image, since these small regions are embedded inside the amorphous matrix, whose thickness is 10-20 times larger than these inclusions.…”

Section: Determination Of the Surface Structures And Phase Compositionmentioning

confidence: 99%

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

et al. 2012

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Abstract⎯Silicon carbonitride layers have been obtained by chemical deposition from the gas phase with thermal (LPCVD) and plasma (PECVD) activation of the gas mixture of helium with the new volatile silicon organic compound tris(diethylamino)silane (Et 2 N) 3 SiH (TDEAS) in the temperature region 373-1173 K. Thermodynamic simulation of the deposition processes from the gas mixture (TDEAS + He) in the temper ature interval 300-1300 K and pressure interval from 1 × 10 -2 to 10 mm Hg has revealed the possibility of varying the equilibrium composition of the condensed phase depending on the synthesis temperature and the composition of the initial gas mixture. Physicochemical and functional properties of obtained layers were studied by complex of modern methods. It has been established that the chemical composition of the silicon carbonitride layers obtained by the PECVD method, depending on the deposition conditions, approaches that of silicon oxynitride or nitride, and the composition of those obtained by the LPCVD method approaches that of silicon carbide. The presence of nanocrystals with a phase composition close to the stan dard α Si 3 N 4 phase and of carbon inclusions has been found in the layers.

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“…First, the carbon phase is amorphous -like and, consequently, gives the same projection of the potential as well as the amorphous SiC x N y matrix surrounding the carbon nanocrystals; second, the ordered carbon regions are much smaller than the film thickness of 10-20 nm irradiated with the electron beam. [60][61][62] In the latter case, the presence of well-ordered graphite-like inclusions are not necessarily visible in the HREM image, since these small regions are embedded inside the amorphous matrix, whose thickness is 10-20 times larger than these inclusions. In fact, the analysis of the Raman spectra shows the graphite-like regions in the samples of only several nanometers.…”

Section: 51mentioning

confidence: 99%

PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor

Файнер

Plekhanov

Golubenko

et al. 2014

ECS J. Solid State Sci. Technol.

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Deposition of thin SiC x N y layers from a new single-source organosilicon compound, methyltris(diethylamino)silane (MTDEAS) mixed with helium or nitrogen is studied by using thermodynamic simulation of Si-C-N-H(He)-O system and experimentally by low pressure (10 −2 -10 Torr) plasma enhanced chemical vapor decomposition (PECVD) in the temperature range of 300-1300 K. Thermodynamic simulation allowed to find the temperature boundaries of solid phase formation. The phase composition, as well as physicochemical and functional properties of the layers has been studied using a complex of modern experimental techniques, including Raman spectroscopy, scanning electron (SEM) and atomic force microscopy (AFM), X-ray diffraction using synchrotron radiation (XRD-SR), ellipsometry and spectrophotometry. The electrophysical parameters were measured using the C-V characteristics. The microhardness and Young's modulus were determined by Nanoindentation method. It was shown that the layers contain crystals of phases belonging to Si 3-x C x N 4 structures, such as α-Si 3 N 4 , α-Si 2 CN 4 , α-SiC 2 N 4 , and α-C 3 N 4 which, possibly, are embedded in the amorphous matrix of silicon carbonitride layers.

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Correlation between the microstructure and optical properties of carbon nitride films deposited by rf magnetron sputtering

Cited by 9 publications

References 6 publications

Plasma Deposition and Properties of Silicon Carbonitride Films

Plasma Deposition and Properties of Silicon Carbonitride Films

Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor

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