Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates

Hou, Yunfei; Feng, Zhe-Chuan; Chen, J; Zhang, X; Chua, Soo-Jin; Lin, Jianyi

doi:10.1016/s0038-1098(00)00134-4

Cited by 8 publications

(3 citation statements)

References 23 publications

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“…The feature of sapphire located at 630 cm -1 does not exist in as-grown GaN thin film spectrum, suggesting that the GaN layer is thick (5 µm, as determined by cross-sectional SEM). Thus, the feature is dominant by GaN layer instead of sapphire substrate [11]. Apart from that, the IR spectrum for the as-grown GaN thin film exhibited a dominant reflectance peak at 559 cm -1 , as well as a small, broad dip around 734 cm -1 .…”

Section: Results and Dissusionmentioning

confidence: 91%

Formation and Optical Studies of Porous GaN Thin Films via UV-Assisted Electrochemical Etching Approach

Yam

Haslan

et al. 2014

AMR

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This paper presents the investigation of porous gallium nitride (PGaN) thin films by ultra-violet (UV)-assisted electrochemical etching at various etching durations. The etching process was performed in potassium hydroxide aqueous solution under illumination of 150 W xenon lamp. The surface morphology and cross-section of the PGaN thin films were examined by scanning electron microscopy. Increased etching duration resulted in a more homogeneous pore distribution. Results showed that the etching duration strongly influences the layer characteristic of porous structure. Infrared (IR) and Raman studies were performed to investigate the optical properties of PGaN. IR spectroscopy revealed that the PGaN thin films exhibit distinctive IR spectra as compared to the as-grown GaN thin film. The number of interference fringes in the non-reststrahlen band is correlated to the film thickness of as-grown and PGaN thin films. The Raman measurements clearly reveal two forbidden optical phonon modes observed in all the PGaN thin films. This result indicates the crystal disordering in the films. Additionally, the findings show that the intensity of these forbidden modes becomes stronger with increasing etching duration.

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Section: Results and Dissusionmentioning

confidence: 91%

Formation and Optical Studies of Porous GaN Thin Films via UV-Assisted Electrochemical Etching Approach

Yam

Haslan

et al. 2014

AMR

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“…This model has been extended to three components to analyse infrared spectra of sintered NiO [16] and to analyze infrared spectra of GaN films [18], and to four components to analyse spectra of sintered SiC [19].…”

Section: Analysis and Discussionmentioning

confidence: 99%

“…An attempt to explain the nature of the intergranular material has been given in [18] for the case of gallium nitride films, where it is described as a non-crystalline material connecting the crystalline grains. This is also mentioned in [19] in the case of sintered SiC.…”

Section: Analysis and Discussionmentioning

confidence: 99%

Infrared properties of sintered α-MnSe

Nikolić

Blagojević

et al. 2006

International Journal of Materials Research

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Infrared properties of sintered α-MnSeDedicated to Professor Dr. Fritz Aldinger on the occasion of his 65th birthday Far-infrared reflection spectra of sintered α-MnSe were measured at room temperature. The measured spectrum had one pronounced peak in accordance with literature data and group theory estimation and one smaller peak resulting from the applied sintering procedure. The measured reflection spectrum was analyzed using Kramers -Kronig analysis and a three-component effective medium model based on Bruggeman's theory assuming the presence of a small amount of pores, dominant crystalline grains and intergranular material. In the model the crystalline grains were modeled as a single oscillator appropriate to the single crystal and the intergranular material was also defined as a single ionic oscillator.

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Infrared micro optical reflectance spectra of InN

Kurihara

Fukui

Yanagawa

et al. 2008

Phys. Status Solidi (c)

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Micro optical reflecance measurements of InN films have been performed at middle and near infrared region. Spectrum line shape fitting calculation based on theoretical formula which takes account of the coupling between LO phonons and plasmons have been also performed. Small area reflectance spectra (50 μm × 50 μm) at every points in the field of microscope vision show both similar and different line shapes by wavenumber location. The different part is mainly responsible for plasmon relaxation time which directly correspond to the carrier mobility. Comparison among contour image map of the fitting parameters and visible image is also presented. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates

Cited by 8 publications

References 23 publications

Formation and Optical Studies of Porous GaN Thin Films via UV-Assisted Electrochemical Etching Approach

Formation and Optical Studies of Porous GaN Thin Films via UV-Assisted Electrochemical Etching Approach

Infrared properties of sintered α-MnSe

Infrared micro optical reflectance spectra of InN

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