Correlation between the diffusion of borons atoms and the growth kinetics of oxidation-induced stacking faults

Claeys, Cor; Declerck, G.; Overstrateten, R.J. van

doi:10.1051/rphysap:019780013012079700

Cited by 23 publications

(2 citation statements)

References 25 publications

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“…When boron atoms diffuse into silicon, some of the boron atoms kick silicon atoms out from lattice sites to activate boron atoms, resulting in silicon interstitial generation. 31) The generated silicon interstitials can easily form boron and silicon interstitial pairs.…”

Section: Dependence Of Diffusivity On Bsg Boron Concentrationmentioning

confidence: 99%

Enhancement and retardation of thermal boron diffusion in silicon from atmospheric pressure chemical vapor deposited boron silicate glass film

Kurachi¹,

Yoshioka

2014

Jpn. J. Appl. Phys.

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Thermal boron diffusion into silicon from boron silicate glass (BSG) prepared by atmospheric pressure CVD (AP-CVD) has been investigated in terms of the BSG boron concentration dependence on diffusion mechanism for N-type solar cell applications. With thermal diffusion at 950 °C in N2 for 20 min, the sheet resistance of the boron-diffused layer decreases with BSG boron concentration up to approximately 4 × 1021 cm−3 at which a boron-rich layer (BRL) is formed at the surface. However, the resistance increases with BSG boron concentration when the BSG boron concentration is higher than 4 × 1021 cm−3. It is also confirmed that the diffusion depth decreases with increasing BSG boron concentration within this BSG concentration region. To clarify this mechanism, the BSG boron concentration dependence on boron diffusivity has also been studied. From extracted diffusivities, the anomalous diffusion can be explained by silicon interstitials formed owing to kick-out by diffused boron atoms and by silicon interstitial generation–degradation due to BRL formation.

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Section: Dependence Of Diffusivity On Bsg Boron Concentrationmentioning

confidence: 99%

Enhancement and retardation of thermal boron diffusion in silicon from atmospheric pressure chemical vapor deposited boron silicate glass film

Kurachi¹,

Yoshioka

2014

Jpn. J. Appl. Phys.

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“…However, the nature of defects and the exact mechanism of the phenomenon could not be identified. Claeys et al (1978) reported studies on the correlation between the diffusion of boron atoms and the growth kinetics of oxidation-induced stacking faults. The experiments led to the important conclusion that boron diffusion in silicon has a component connected with silicon interstitials.…”

Section: Physics Of Ion Implantation and Annealingmentioning

confidence: 99%

Formation of Ultra-Shallow Junctions

Seebauer

Gorai

2011

Comprehensive Semiconductor Science and Technology

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Point Defects, Diffusion, and Precipitation

Gösele

2013

Materials Science and Technology

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The sections in this article are Introduction Native (Intrinsic) Point Defects Under Thermal Equilibrium Conditions Native (Intrinsic) Point Defects Under Nonequilibrium Conditions Phenomenological Description of Diffusion Processes Atomistic Diffusion Mechanisms Diffusion Without Involvement of Native Point Defects Simple Vacancy Exchange and Interstitialcy Mechanisms Interstitial‐Substitutional Mechanisms Uncharged Species Charged Species Recombination‐Enhanced Diffusion Diffusion in Silicon General Remarks Silicon Self‐Diffusion Interstitial‐Substitutional Diffusion: Au , Pt and Zn in Si Dopant Diffusion Fermi Level Effect Influence of Surface Reactions Dopant‐Diffusion‐Induced Nonequilibrium Effects Recombination‐Enhanced Diffusion Diffusion of Carbon and Other Group IV Elements Diffusion of Si Self‐Interstitials and Vacancies Oxygen and Hydrogen Diffusion Diffusion in Germanium Diffusion in Gallium Arsenide General Remarks Gallium Self‐Diffusion and Superlattice Disordering Intrinsic Gallium Arsenide Doped Gallium Arsenide Arsenic Self‐Diffusion and Superlattice Disordering Impurity Diffusion in Gallium Arsenide Silicon Diffusion Interstitial–Substitutional Species Comparison to Diffusion in Other III – V Compounds Agglomeration and Precipitation Agglomerates of Native Point Defects in Silicon Void and Gallium Precipitate Formation During Zinc Diffusion into Ga As Precipitation with Volume Changes in Silicon

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Correlation between the diffusion of borons atoms and the growth kinetics of oxidation-induced stacking faults

Cited by 23 publications

References 25 publications

Enhancement and retardation of thermal boron diffusion in silicon from atmospheric pressure chemical vapor deposited boron silicate glass film

Enhancement and retardation of thermal boron diffusion in silicon from atmospheric pressure chemical vapor deposited boron silicate glass film

Formation of Ultra-Shallow Junctions

Point Defects, Diffusion, and Precipitation

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