Thermal boron diffusion into silicon from boron silicate glass (BSG) prepared by atmospheric pressure CVD (AP-CVD) has been investigated in terms of the BSG boron concentration dependence on diffusion mechanism for N-type solar cell applications. With thermal diffusion at 950 °C in N2 for 20 min, the sheet resistance of the boron-diffused layer decreases with BSG boron concentration up to approximately 4 × 1021 cm−3 at which a boron-rich layer (BRL) is formed at the surface. However, the resistance increases with BSG boron concentration when the BSG boron concentration is higher than 4 × 1021 cm−3. It is also confirmed that the diffusion depth decreases with increasing BSG boron concentration within this BSG concentration region. To clarify this mechanism, the BSG boron concentration dependence on boron diffusivity has also been studied. From extracted diffusivities, the anomalous diffusion can be explained by silicon interstitials formed owing to kick-out by diffused boron atoms and by silicon interstitial generation–degradation due to BRL formation.