Correlation Between the Degradation of Perpendicular Anisotropy and the Double Hysteresis Behavior in [Pd/Co]$_{\rm n}$/FeMn Exchange Biased Thin Films

Kim, Sunwook; Bae, Seongtae; Lin, Lin; Joo, Ho Wan; Hwang, Dosam

doi:10.1109/tmag.2009.2025034

Cited by 3 publications

(3 citation statements)

References 24 publications

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“…The film thickness and the multilayer structure have been chosen based on the previous work to achieve a large exchange coupling and strong perpendicular anisotropy. 17,18 The base pressure was kept below 2 ϫ 10 −8 Torr and the Ar working gas pressure was fixed at 3 mTorr. A vibrating sample magnetometer and an extraordinary Hall effect system were used to measure the magnetic properties of the multilayers and the PEB systems at room temperature.…”

Section: Methodsmentioning

confidence: 99%

“…This directly results in an increase in the canting angle of ͓Pd/ Co͔ 5 spins toward the in-plane direction and a serious degradation of the perpendicular component of FM layer magnetization ͑S FMЌ ͒. 18 Those spins of FeMn, which were originally canted 19.5°from ͑111͒ plane also align more parallel to the in-plane direction due to the increase in the precession angle caused by the large in-plane applied magnetic field. Hence, J ex decreases dramatically due to the decrease in the net magnetization of ͓Pd/ Co͔ 5 and FeMn in the perpendicular direction as described in Eq.…”

Section: Figmentioning

confidence: 99%

“…8͑c͒ due to the degradation of K FM,eff ϫ t FM ͑by the development of an in-plane anisotropy͒, K AFM ϫ t AFM and J ex caused by the magnetically induced anisotropy. 18 Figure 9 shows the MFM images of the "top structure" before and after annealing at 240°C with a 2.2 kOe of magnetic field applied to the in-plane film direction. As can be seen in Fig.…”

Section: Figmentioning

confidence: 99%

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A physical model of exchange bias in [Pd/Co]5/FeMn thin films with perpendicular anisotropy

Lin¹,

Thiyagarajah²,

Joo³

et al. 2010

Journal of Applied Physics

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A physical model of perpendicular exchange bias (PEB) has been established based on the total energy equation per unit area of an exchange bias system by assuming coherent rotation of the magnetization. The anisotropy energy of antiferromagnetic (AFM) layer, KAFM×tAFM, as well as ferromagnetic (FM) multilayers, KFM,eff×tFM, and the interfacial exchange coupling energy, Jex were considered as primary physical parameters in building up the physical model of PEB phenomenon. It was proposed that the PEB is a result of the energy competition between KAFM×tAFM, KFM,eff×tFM, and Jex; where KAFM×tAFM≥Jex, is a critical condition to observe exchange bias in the system. In particular, it was revealed that Jex is directly relevant to the net magnetization of FM and AFM spin structure, Jex∝cos αAFM×cos βFM, in the perpendicular direction rather than the magnetization angle difference observed in an in-plane system. The physical role of perpendicular anisotropy energy, KFM,eff×tFM was also found to be significant to enhance the PEB. These physical characteristics are completely different from those are observed from an exchange bias system with in-plane anisotropy. The physical validity of the proposed PEB model was confirmed using different structures of exchange biased [Pd/Co]5/FeMn thin films with perpendicular anisotropy. The experimentally analyzed results demonstrated that the physical model of PEB proposed in this work is agreed well with the experimentally observed PEB phenomenon. Furthermore, the proposed model was found to be effective to design and to predict a new PEB system for the advanced spintronics applications.

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Section: Methodsmentioning

confidence: 99%

Section: Figmentioning

confidence: 99%

Section: Figmentioning

confidence: 99%

See 1 more Smart Citation

A physical model of exchange bias in [Pd/Co]5/FeMn thin films with perpendicular anisotropy

Lin¹,

Thiyagarajah²,

Joo³

et al. 2010

Journal of Applied Physics

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Electric field controlled perpendicular exchange bias in Ta/Pt/Co/IrMn/Pt heterostructure

Wang,

Li,

et al. 2023

Applied Physics Letters

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Perpendicular exchange bias (PEB) is an essential effect of antiferromagnetic materials. It has the advantages over the in-plane exchange bias in application of magnetic random access memory (MRAM) technology, particularly in terms of higher packing density. The influence of the strain effect on PEB of Ta/Pt/Co/Ir20Mn80/Pt multilayers deposited on the piezoelectric substrate is studied in this work. It is found that the exchange bias field (Hex) can be regularly regulated by the strain effect introduced by the piezoelectric substrate. It indicates that the uncompensated spins at the interface of Ir20Mn80/Co can be reoriented under the strain effect, resulting in the variation of Hex. Furthermore, we propose a MRAM device structure based on the strain-mediated PEB, which enables field-free magnetization switching driven by the pure strain. Our study demonstrates the controllability of PEB and its application in spintronics, providing a method for the development of antiferromagnetic material-based next generation MRAM.

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Effects of NiFe/Co Insertion at the [Pd/Co] and Cu Interface on the Magnetic and GMR Properties in Perpendicularly Magnetized [Pd/Co]/Cu/[Co/Pd] Pseudo Spin-Valves

2010

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Correlation Between the Degradation of Perpendicular Anisotropy and the Double Hysteresis Behavior in [Pd/Co]$_{\rm n}$/FeMn Exchange Biased Thin Films

Cited by 3 publications

References 24 publications

A physical model of exchange bias in [Pd/Co]5/FeMn thin films with perpendicular anisotropy

A physical model of exchange bias in [Pd/Co]5/FeMn thin films with perpendicular anisotropy

Electric field controlled perpendicular exchange bias in Ta/Pt/Co/IrMn/Pt heterostructure

Effects of NiFe/Co Insertion at the [Pd/Co] and Cu Interface on the Magnetic and GMR Properties in Perpendicularly Magnetized [Pd/Co]/Cu/[Co/Pd] Pseudo Spin-Valves

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