Correlation between Special Grain Boundaries and Electromigration Behavior of Aluminum Thin Films

Lee, K. T.; Szpunar, Jerzy A.; Morawiec, Adam; Knorr, D. B.; Rodbell, K. P.

doi:10.1179/cmq.1995.34.3.287

Cited by 14 publications

(3 citation statements)

References 17 publications

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“…It is well documented [1,2] that the strength of this texture is strongly correlated with the lifetime of interconnects and that strong { 111 } texture guarantee good resistance against electromigration failure. The results that support this statement are presented in In weakly textured materials { 111 } textured grains are usually accompanied by { 110} texture components.…”

Section: Failure Of Ai-cu Interconnect Linesmentioning

confidence: 98%

Texture in films: Selected examples

Szpunar

2000

Metals and Materials

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The paper contains a brief discussion of research on texture and properties of films. Three examples are selected to illustrate problems of understanding of texture development and correlation between texture and properties of films. Various correlations between texture related structural characteristics of film and probability of failure of A1-Cu interconnects line are presented to illustrate the need for a better understanding of the correlation between texture and failure mechanism. Another example on development of texture in nickel films illustrates processes that influence texture development and type of interfaces between oxide grains. It is demonstrated that texture and grain boundary character distribution decides the rate of oxidation of Nickel. An example of Co-Cr films for magnetic recording media illustrates an important role of texture in controlling the magnetic properties of films for application in perpendicular magnetic recording. Principles of methods that are used to calculate texture influence on magnetic properties are discussed.

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Section: Failure Of Ai-cu Interconnect Linesmentioning

confidence: 98%

Texture in films: Selected examples

Szpunar

2000

Metals and Materials

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“…During the thermal cycling, thermal stresses will develop in the TSV interconnect structure and in surrounding Si substrate due to the mismatch in coefficient of thermal expansion (CTE) between TSV material, dielectric, and Si substrate. This will cause reliability issues such as via extrusion, cracking, voids, delamination, and mobility degradation of device performance [7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Characterization of local strain/stress in copper through-silicon via structures using synchrotron x-ray microdiffraction, electron backscattered diffraction and nonlinear thermomechanical model

Song

Mundboth

Szpunar

et al. 2015

J. Micromech. Microeng.

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In this study, the thermomechanical characteristics of copper through-silicon via (Cu TSV) structures were studied using synchrotron x-ray microdiffraction, electron backscattered diffraction (EBSD), and nonlinear numerical modeling. The strain and stress distribution in the Si substrate was measured by synchrotron x-ray microdiffraction from the tops of the TSV structures. The strain distribution map in a Cu via was determined from EBSD data by the kernel average misorientation (KAM) method and microstructural characteristics of the Cu via were investigated. The results offered direct evaluation of the local strain and stress induced in the Cu via and its surrounding silicon substrate. A finite element model including nonlinear plastic deformation was built for predicting thermomechanical behaviors of Cu TSV structures. The results show that the stress distribution obtained by finite element modeling is in relatively good agreement with the measurements of synchrotron x-ray microdiffraction and EBSD.

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“…Since the Cu damascene process has been introduced in the IC, significant research on the relationship between texture and reliability of copper interconnects has been undertaken [2][3][4]. It is well known that strong {111} texture increases the resistance of electromigration failure and this failure can be correlated with the frequency of the occurrence of CSL (coincidence site lattice) boundaries and low or high diffusivity boundaries in aluminum thin films [5]. However, such relationships for the Cu interconnects haven't been firmly established and the driving force which can affect the textural transformation of Cu damascene interconnects during annealing were not clearly identified until now [6,7].…”

Section: Introductionmentioning

confidence: 99%

Texture Investigation in Cu Damascene Interconnects during Annealing

Cho

Kim³

et al. 2005

MSF

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Textural changes of Cu interconnects having a different line width were investigated after annealing. Texture was measured by XRD (x-ray diffraction) at different depth of the interconnect line and on the surface of interconnects using EBSD (electron backscattered diffraction) techniques. To analyze the relationship between the stress distribution and textural evolution observed in the different samples, the stresses were calculated for the different line width at 200°C using FEM (finite element modeling) along the width and depth of the line. In this investigation, it was found that the inhomogeneity of stress distribution in Cu interconnects is an important factor necessary for understanding textural transformation during annealing. Textural evolution in damascene interconnects lines during annealing is discussed, based on the state of stress in Cu electrodeposits.

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Correlation between Special Grain Boundaries and Electromigration Behavior of Aluminum Thin Films

Cited by 14 publications

References 17 publications

Texture in films: Selected examples

Texture in films: Selected examples

Characterization of local strain/stress in copper through-silicon via structures using synchrotron x-ray microdiffraction, electron backscattered diffraction and nonlinear thermomechanical model

Texture Investigation in Cu Damascene Interconnects during Annealing

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