Correlation between Ni Valence and Resistance Modulation on a SmNiO₃ Chemical Transistor

Abstract

The resistance modulation under various gate voltage (Vg) application conditions was systematically studied for a chemical field effect transistor (FET) composed of a SmNiO 3 (SNO) film channel and an ionic liquid gate insulator. The channel resistance of the SNO chemical FET changed nonlinearly over a wide range for different temperatures, Vg magnitudes, and Vg application durations. The correlation between the modulated resistance and the Ni valence state was quantitatively revealed using X-ray photoelectron spectroscopy. A model describing the resistance change with the Vg application conditions was proposed by considering the kinetics of the reduction reaction on the SNO channel. This model enables the resistance to be predicted for given Vg application conditions and selective resistance modulation over a wide range of resistances has been demonstrated.

Effects of Off-Stoichiometry in the Epitaxial NdNiO3 Film on the Suppression of Its Metal-Insulator-Transition Properties

“…We can clearly observe that the shape of the XPS spectra for NNO4 is different from others. The observed Ni 2p 3/2 spectra were fitted with two symmetric Voigt components: Ni 2+ and Ni 3+ . ,− The peak intensity of Ni 2+ (BE = 852.7 eV) relative to that of Ni 3+ (BE = 854.8 eV) decreased from NNO1 to NNO3, whereas Ni 2+ was dominant in NNO4. The Nd 3d 5/2 spectra were fitted with two Voigt functions: Nd 3+ (BE = 982.5 eV) and its satellite (BE = 979.0 eV). ,, From the intensities of these components, we can estimate their atomic percentages (atom %) in the surface region using the established photoelectron cross sections and mean free path .…”

Electrochromic Properties of Perovskite NdNiO3 Thin Films for Smart Windows

“…Rare earth nickelates with a perovskite structure (ABO 3 ) are of broad research interest due to their highly sensitive electronic phase diagram with respect to orbital electron occupancy. − As a representative, NdNiO 3 (NNO) shows metallic conduction behavior and is neutral gray at room temperature with single electron occupancy in the e g orbital of Ni 3d bands (e g 1 ). − Upon cation intercalation accompanied by an extra electron filling, the Ni state in the pristine NNO experiences crossover to the Ni 2+ state that is highly localized (e g 2 ). , The strong carrier localization opens up an optical gap and makes the material transmissive. The ion–electron intercalation therefore leads to completely opposing effects compared with WO 3 , as shown schematically in Figure .…”

Perovskite neural trees

“…By solving a set of electrothermal equations self-consistently (see Methods section for details), we simulate the proton drift under electrical pulses. Since the resistance of the nickelate device is exponentially related to the local proton concentration 34 , a positive electric pulse will dilute the proton concentration near the Pd electrode and thus decrease the device resistance and vice versa. The simulated total device resistance under different pulse fields and pulse widths is plotted in Fig.…”