Correlation between low-frequency noise and interface traps of fully-depleted silicon-on-insulator tunneling FETs induced by hot carrier stress

Abstract

The generation of interface traps at the drain corner during hot-carrier-stress (HCS) in a fully-depleted silicon-on-insulator tunneling field-effect transistor (TFET) was invested and correlated to low-frequency noise performance. The hot carrier damage increases the number of the generated interface traps because hot carriers could gain high kinetic energy to reach the conduction band near the drain region in TFET. Unlike the results of channel-HCS characteristics in MOSFETs, the frequency exponent γ under the same stress voltage conditions in TFET decreased by 21.4%, which was attributed by the generation of interface traps as compared to deeper border traps.

Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET

“…µ is the carrier defective mobility 22 , and it was assumed to be 300 cm 2 Vs −1 . However, it is so small that it does not affect the final value in the calculation with (4). In other words, N t can be obtained from (5), where k is the Boltzmann constant, T is the temperature, and λ is the tunneling attenuation length (≈ 0.1 nm in SiO 2 ) 26 .…”

“…The RTN was not averaged because it occurs during the short capture and emission events induced by a channel carrier. The charge pumping method for no-body contact was previously studied for a floating-body device 4 , 13 and the three-dimensional interface of a fin structure 14 . Despite the no-body contact, the charge pumping method for TFETs is similar to the conventional charge pumping method for CMOSFETs.…”

“…However, other important factors such as the 1/ f noise and random telegraph signal noise (RTN) have received less attention despite being a significant limiting factor in analog and digital circuits. The effects of trap sites within the gate oxide and the current induced via fluctuation have emerged as critical concerns as devices continue to be scaled down 4 , 5 . The gate and potential barrier between the channel and source control the band-to-band tunneling mechanism in TFETs while drift–diffusion is used in conventional metal–oxide–semiconductor field-effect transistors (MOSFETs).…”

A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

“…However, other important factors of TFETs, such as the 1/f noise, have received less attention despite being significant limiting factors in analog and digital circuits. The fluctuation of the current induced by the trap sites within the gate dielectric has emerged as a critical concern as devices have aggressively been scaled down [4], [5]. The gate and potential barrier between the channel and source control the band-to-band tunneling (BTBT) mechanism in TFETs, while drift-diffusion is used in a conventional metal-oxide-semiconductor fieldeffect transistor (MOSFET).…”