A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

Abstract

The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET). We demonstrated that the origin of LFN properties in pTFET can be deduced and analyzed via the current fluctuation induced by tunneling in the pTFET operation region. Since the trap sites near the tunneling junction contributed to LFN, pTFET must consider the tunneling junction characteristics and channel transportation influences. The tunneling path was not formed at low |VGS| and the carrier transport in pTFET crossed the energy band by Shockley-Read-Hall (SRH) generation-recombination or the trap-assisted tunneling (TAT) mechanism and not through band-to-band tunneling (BTBT). However, with the increase in |VGS|, the tunneling path was formed and the carriers could flow through the energy band by BTBT. The correlation between the simulated model data and experimental data was examined, confirming that the proposed small-signal model accurately represents noise in pTFETs.

Effect of high-pressure D2 and H2 annealing on LFN properties in FD-SOI pTFET

“…A few active traps around the tunnel junction of a TFET can influence the junction electric field and result in current fluctuations. Since the tunneling junction in TFET has a significant impact on electrical performance, the major LNF mechanism in nTFETs has been explained by carrier number fluctuations 6 . However, as the LNF properties in pTFETs have been still unclear, studies of the improvement on the LFN properties are still merit.…”