Correlation between iron self-diffusion and thermal stability in doped iron nitride thin films

Tayal, Akhil; Gupta, Mukul; Kumar, Dinesh; Reddy, V. R.; Gupta, Ajay; Amir, S. M.; Korelis, Panagiotis; Stahn, J.

doi:10.1063/1.4902962

Cited by 10 publications

(10 citation statements)

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“…We selected five samples deposited at R N2 =10% for various Al doping. At this value of R N2 the structure of all samples is similar (nanocrystalline α-Fe-N phases) and samples are expected to show soft magnetic properties 35,46 . When N atoms are incorporated in bcc-Fe, they occupy interstitial sites within the Fe lattice.…”

Section: Investigation Of Thermal Stabilitymentioning

confidence: 96%

“…), which has low ∆H • f for its nitrides and high affinity nitrogen, is added in the Fe-N system, then it can thermally stabilize the iron nitride compounds 3,20,[23][24][25][26][27][28][29][30][31][32][33] . Very recent study elucidates that enhancement of thermal stability actually results from the suppression of Fe self-diffusion 34,35 . In addition, it was observed that Al doping is most efficient (compared to other dopants e.g.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Al doping on phase formation and thermal stability of iron nitride thin films

Tayal

Gupta

Pandey

et al. 2015

Journal of Alloys and Compounds

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a b s t r a c tIn the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (FeeN) thin films. FeeN thin films with different concentration of Al (Al ¼ 0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 and 100%. The structural and magnetic properties of the films were studied using x-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic FeeN phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3 at.%, nitrogen rich nonmagnetic FeeN phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped FeeN films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2 at.% improves it marginally, whereas, for 3, 6 and 12 at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of FeeN and AleN.

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Section: Investigation Of Thermal Stabilitymentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

Tayal

Gupta

Pandey

et al. 2015

Journal of Alloys and Compounds

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“…As expected, Fe diffusivity suppress significantly with Al doping. In a recent study Fe self-diffusion was measured in ion beam sputtered Fe-N samples prepared using Al and Zr doping and found Fe diffusion suppresses both with Al and Zr doping [69].…”

Section: -7mentioning

confidence: 99%

Effect of dopants on thermal stability and self-diffusion in iron-nitride thin films

et al. 2014

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We studied the effect of dopants (Al, Ti, Zr) on the thermal stability of iron-nitride thin films prepared using a dc magnetron sputtering technique. Structure and magnetic characterization of deposited samples reveal that the thermal stability together with soft magnetic properties of iron-nitride thin films get significantly improved with doping. To understand the observed results, detailed Fe and N self-diffusion measurements were performed. It was observed that N self-diffusion gets suppressed with Al doping, whereas Ti or Zr doping results in somewhat faster N diffusion. On the other hand, Fe self-diffusion seems to get suppressed with any dopant of which the heat of nitride formation is significantly smaller than that of iron nitride. Importantly, it was observed that N self-diffusion plays only a trivial role, as compared to Fe self-diffusion, in affecting the thermal stability of iron-nitride thin films. Based on the obtained results, the effect of dopants on the self-diffusion process is discussed.

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“…Figure 4 displays the XRD patterns of FeN films deposited on PET substrates at varying deposition time spans from 20 min to 55 min while keeping the nitrogen flow constant at 10 sccm. A logical evolution of iron nitride phases can simply be acquired by changing the time of nitrogen reactivity to occupy interstitial sites within the bcc-Fe lattice [ 26 ]. For the samples with sputtering time of 20 min (C1), 30 min (C2), 45 min (C3), and 55 min (C4), their thickness is 74 nm, 79 nm, 94 nm and 184 nm respectively as shown in Table 1 .…”

Section: Resultsmentioning

confidence: 99%

“…This problem can be solved by the doping of third element/s. Magnetic properties of the films enhanced markedly with Al addition, however Zr addition has only a minimal effect on the thermal stability of FeN thin films [ 26 ]. Akhil et al reported that addition of 12 at % Al results in the presence of Al atoms at grain boundaries and dissolved substitutionally improves the thermal stability without any change in grain size [ 27 ].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Sputtering Parameters and Doping of Copper on Surface Free Energy and Magnetic Properties of Iron and Iron Nitride Nano Thin Films on Polymer Substrate

et al. 2017

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The objective of this study was to deposit thin films on PET polymer substrate and examine the functional properties systematically. Their properties have been studied as a function of the N2-Ar flow rates, deposition time span and Cu doping. Iron nitride film deposited on both sides exhibits ferromagnetic phases, γ′-Fe4N and ε-Fe3N co-existed, shows negligible magnetic anisotropy. Other samples show the evolution of N-rich (FeN, Fe2N) and N-poor (Fe16N2, Fe3N, Fe4N) phases under different deposition time conditions. XPS analysis and free energy calculations confirmed that co-sputtered Fe-Cu thin films are more stable than layer deposited counterparts. From VSM results it is evident that the dominant phase, changes steadily from the ferromagnetic α-Fe (N) to the paramagnetic ξ-Fe2N with the increase of nitrogen flow rates and the ordering of the nitrogen atoms. Binding energy increases steadily from 733 eV to 740 eV with the increasing thickness of thin films from 74 nm to 94 nm. It was observed that surface energy decreases as the contact angle of glycol increases and changes the thin film surface from polar to nonpolar. TEM images indicate that cubic γ′-Fe4N and ε-Fe3N nano particles oriented in preferred directions dispersed uniformly in the amorphous iron nitride matrix.

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Correlation between iron self-diffusion and thermal stability in doped iron nitride thin films

Cited by 10 publications

References 68 publications

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

Effect of Al doping on phase formation and thermal stability of iron nitride thin films

Effect of dopants on thermal stability and self-diffusion in iron-nitride thin films

The Effect of Sputtering Parameters and Doping of Copper on Surface Free Energy and Magnetic Properties of Iron and Iron Nitride Nano Thin Films on Polymer Substrate

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