Correlation between crystal growth and photosensitization of nanostructured TiO2 electrodes using supporting Ti substrates by self-assembled CdSe quantum dots

Toyoda, Taro; Kobayashi, Junya; Shen, Qing

doi:10.1016/j.tsf.2007.04.143

Cited by 8 publications

(3 citation statements)

References 38 publications

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“…In addition, as commented in the case of the dark voltammetry experiment, the aggregation of QDs in the external part of the channels forming part of the mesoporous structure blocks the access of sulfite to the interior of the channels, leading to full recombination. A similar behavior has been observed for TiO 2 electrodes sensitized with CdS 4,8 QDs prepared by successive ionic layer reaction and, in the case of CdSe, 27,44 prepared by chemical bath deposition. In such cases, the IPCE only increases for the first coatings, while, for the electrodes with a larger amount of semiconductor sensitizer, a strong decrease of the IPCE is observed.…”

Section: Resultssupporting

confidence: 78%

CdSe Quantum Dot-Sensitized TiO₂ Electrodes: Effect of Quantum Dot Coverage and Mode of Attachment

et al. 2009

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Registro de acceso restringido Este recurso no está disponible en acceso abierto por política de la editorial. No obstante, se puede acceder al texto completo desde la Universitat Jaume I o si el usuario cuenta con suscripción. Registre d'accés restringit Aquest recurs no està disponible en accés obert per política de l'editorial. No obstant això, es pot accedir al text complet des de la Universitat Jaume I o si l'usuari compta amb subscripció. Restricted access item This item isn't open access because of publisher's policy. The full--text version is only available from Jaume I University or if the user has a running suscription to the publisher's contents.

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Section: Resultssupporting

confidence: 78%

CdSe Quantum Dot-Sensitized TiO₂ Electrodes: Effect of Quantum Dot Coverage and Mode of Attachment

et al. 2009

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“…However, the amount of QDs that cause the decline in IPCE is dependent on the molecular linker used, indicating that the choice of linker is influencing the electron transfer process [200,201]. Similar trends have also been observed in samples with QDs deposited by SILAR or CBD [202][203][204][205]. These deposition methods also result in the growth of larger QDs as the quantity of QDs increases.…”

Section: Loading On Mesoporous Etlssupporting

confidence: 56%

Nanostructured photovoltaics

2019

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In this review, we begin by discussing the need for harnessing renewable energy resources in the context of global energy demands. A summary of firstand second-generation solar cells, their efficiency and grid parity is provided, followed by the need to reduce material and installation costs, and achieve higher efficiencies beyond the Shockley-Queisser limit imposed on single junction cells. We also discuss the specific advantages offered by nanomaterials in enhanced energy harvesting, what design platforms comprise nanostructured photovoltaics, and list the prominent categories of nanomaterials used in the design of third generation solar cells. We review the significant nanostructured photovoltaic platforms that have encouraging power conversion efficiencies, have the potential for long term stability (both structural and functional) and have received attention in the field. In addition to their operational principle, we highlight both their advantages and shortcomings, along with insights into possible improvements. We include alternate routes to improving power conversion efficiency, not by tuning material properties to match the solar spectrum but using additives and/or structural modifications to allow more efficient harvesting of sunlight, either by reducing losses or by altering the spectral properties. The properties of nanomaterials that make them well-suited as active materials in photovoltaic devices (broadband absorption, high quantum yield, etc.) also make them ideal candidates for luminescent solar concentrators (LSCs). These devices also harvest solar energy, but instead of directly allowing charge generation, they act as downconverters for other photovoltaic cells. We review dye, thin film, and quantum dot based LSCs that have garnered a lot of attention in recent years as these devices face a resurgence given the advances in materials science and engineering which have led to novel quantum dots and hybrid semiconductors. The review ends with where the future of nanostructured photovoltaics is headed, what device designs and materials development are needed to achieve efficiencies beyond the Shockley-Queisser limits and fulfil the goal of the 3rd and 4th generation photovoltaics.

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“…Increasing QD coverage strikes at the heart of a primary problem in the QDSSC design: QDSSCs struggle to achieve high QD loading. − While DSSCs realize nearly complete dye coverage of the TiO 2 , − QD coverage of 15% of the TiO 2 surface is high for QDSSCs, with, for example, only 6% coverage achieved in the highest-efficiency ss-QDSSCs . Increased QD deposition has the clear benefit of increased absorption; previous studies on in situ , and ex situ synthesized QDs indicate that increased QD deposition increases external quantum efficiency (EQE), which the authors attributed to increased adsorption. Bare regions of the TiO 2 surface, not covered by an absorber, contribute significantly to recombination due to the close proximity to the HTM .…”

mentioning

confidence: 99%

Increased Quantum Dot Loading by pH Control Reduces Interfacial Recombination in Quantum-Dot-Sensitized Solar Cells

2015

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The power conversion efficiency of quantum-dot-sensitized solar cells (QDSSCs) hinges on interfacial charge transfer. Increasing quantum dot (QD) loading on the TiO2 anode has been proposed as a means to block recombination of electrons in the TiO2 to the hole transport material; however, it is not known whether a corresponding increase in QD-mediated recombination processes might lead to an overall higher rate of recombination. In this work, a 3-fold increase in PbS QD loading was achieved by the addition of an aqueous base to negatively charge the TiO2 surface during Pb cation deposition. Increased QD loading improved QDSSC device efficiencies through both increased light absorption and an overall reduction in recombination. Unexpectedly, we also found increased QD size had the detrimental effect of increasing recombination. Kinetic modeling of the effect of QD size on interfacial charge transfer processes provided qualitative agreement with the observed variation in recombination lifetimes. These results demonstrate a robust method of improving QD loading, identify the specific mechanisms by which increased QD deposition impacts device performance, and provide a framework for future efforts optimizing the device architecture of QDSSCs.

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Correlation between crystal growth and photosensitization of nanostructured TiO2 electrodes using supporting Ti substrates by self-assembled CdSe quantum dots

Cited by 8 publications

References 38 publications

CdSe Quantum Dot-Sensitized TiO₂ Electrodes: Effect of Quantum Dot Coverage and Mode of Attachment

CdSe Quantum Dot-Sensitized TiO₂ Electrodes: Effect of Quantum Dot Coverage and Mode of Attachment

Nanostructured photovoltaics

Increased Quantum Dot Loading by pH Control Reduces Interfacial Recombination in Quantum-Dot-Sensitized Solar Cells

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Correlation between crystal growth and photosensitization of nanostructured TiO2 electrodes using supporting Ti substrates by self-assembled CdSe quantum dots

Cited by 8 publications

References 38 publications

CdSe Quantum Dot-Sensitized TiO2 Electrodes: Effect of Quantum Dot Coverage and Mode of Attachment

CdSe Quantum Dot-Sensitized TiO2 Electrodes: Effect of Quantum Dot Coverage and Mode of Attachment

Nanostructured photovoltaics

Increased Quantum Dot Loading by pH Control Reduces Interfacial Recombination in Quantum-Dot-Sensitized Solar Cells

Contact Info

Product

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About

CdSe Quantum Dot-Sensitized TiO₂ Electrodes: Effect of Quantum Dot Coverage and Mode of Attachment

CdSe Quantum Dot-Sensitized TiO₂ Electrodes: Effect of Quantum Dot Coverage and Mode of Attachment