Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(100) Schottky barrier diodes

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

“…Ideality factors greater than 1.0 indicate that the transport properties are not well modeled by thermionic emission alone although the contacts remain rectifying [48]. Explanations for the deviation of the ideality factor from unit ranged from assumptions of a generation-recombination current in the space-charge region [5,8,17] to interface dielectric layers to field emission [17] to thermionic field emission [49] due to secondary mechanisms at the interface [30,50]. For example, interface defects may lead to a lateral inhomogeneous distribution of BHs at the interface, resulting in the presence of a wide distribution of low-SBH patches and in excess current leading to a deviation from ideal thermionic emission behavior at low voltages and temperatures.…”

“…It is only in the past decade that an inhomogeneous contact has been considered as an explanation for a voltagedependent BH [12][13][14][15][16]. Boyarbay et al [17] suggested that the recent motivation for studying Schottky barrier formation is due to the recognition that both electronic and chemical equilibria have to be considered together across a reactive interface between a metal and a semiconductor, as surface states and metal-induced states fail to take into consideration the chemical equilibrium at the interface. The chemical equilibrium will result in an interfacial atomic rearrangement, interdiffusion, and inter-metallic compound formation, which should have a profound effect on the electronic equilibrium producing the Schottky barrier [18].…”

“…This may be due to the sensitivity of the Schottky interfaces to preparation procedures and to different techniques of measuring the BH [17]. In recent years, studies of SBH inhomogeneities have been carried out [16,19,[23][24][25][26][27][28][29][30].…”

“…Some studies revealed that the experimentally observed dependences of the effective BHs and ideality factors of MS contacts could be explained by lateral inhomogeneities in the BH [27,30]. The correlation between effective SBHs and ideality factors may be approximated by using a linear relationship [17].…”

“…Although studies have been performed to investigate the relationship between the effective BHs and the ideality factors of metal/Si diodes [2,17,31], and the reactions of germanium (Ge) with nickel (Ni) [32][33][34][35][36][37][38], nothing has yet been reported on the relationship between effective BHs and ideality factors from forward bias currentvoltage (I-V ) and reverse bias capacitance-voltage (C-V ) characteristics of Ni/Ge Schottky diodes. In most previous studies of Ni/Ge, interest has been focused on the formation and the morphology evolution of Ni on n-Ge under rapid thermal annealing.…”