Correlated transition metal oxides and chalcogenides for Mott memories and neuromorphic applications

Cario, Laurent; Tranchant, Julien; Corraze, B.; Janod, Étienne

doi:10.1016/b978-0-12-814629-3.00010-6

Cited by 3 publications

(3 citation statements)

References 158 publications

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“…Moreover, we demonstrated that it is actually universal to all Mott insulators . It does not involve any atom migration nor forming step, which differentiates it strongly from mechanisms based on ionic electro-migration commonly used to explain IMT in oxides, or interfacial switching observed in PCMOs …”

Section: Introductionmentioning

confidence: 68%

“…17 Moreover, we demonstrated that it is actually universal to all Mott insulators. 9 It does not involve any atom migration 18 nor forming step, 9 which differentiates it strongly from mechanisms based on ionic electro-migration commonly used to explain IMT in oxides, 7 or interfacial switching observed in PCMOs. 19 Based on this specific physical mechanism, resistive switching was demonstrated (i.e., stable resistance states, scalability down to 30 nm, and write current <50 μA).…”

Section: ■ Introductionmentioning

confidence: 99%

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Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr_1–xV_x)₂O₃

Rodriguez-Fano,

Haydoura,

Tranchant

et al. 2023

ACS Appl. Mater. Interfaces

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Memories based on the insulator-to-metal transition in correlated insulators are promising to overcome the limitations of alternative nonvolatile memory technologies. However, associated performances have been demonstrated so far only on narrow-gap compounds, such as (V0.95Cr0.05)2O3, exhibiting a tight memory window. In the present study, V-substituted Cr2O3 compounds (Cr1–x V x )2O3 have been synthesized and widely investigated in thin films, single crystals, and polycrystalline powders, for the whole range of chemical composition (0 < x < 1). Physicochemical, structural, and optical properties of the annealed magnetron-sputtered thin films are in very good agreement with those of polycrystalline powders. Indeed, all compounds exhibit the same crystalline structure with a cell parameter evolution consistent with a solid solution over the whole range of x values, as demonstrated by X-ray diffraction and Raman scattering. Moreover, the optical band gap of V-substituted Cr2O3 compounds decreases from 3 eV for Cr2O3 to 0 eV for V2O3. In the same way, resistivity is decreased by almost 5 orders of magnitude as the V content x is varying from 0 to 1, similarly in thin films and single crystals. Finally, a reversible resistive switching has been observed for thin films of three selected V contents (x = 0.30, 0.70, and 0.95). Resistive switching performed on MIM devices based on a 50 nm thick (Cr0.30V0.70)2O3 thin film shows a high endurance of 1000 resistive switching cycles and a memory window R OFF/R ON higher by 3 orders of magnitude, as compared to (Cr0.05V0.95)2O3. This comprehensive study demonstrates that a large range of memory windows can be reached by tuning the band gap while varying the V content in the (Cr1–x V x )2O3 solid solution. It thus confirms the potential of correlated insulators for memory applications.

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Section: Introductionmentioning

confidence: 68%

Section: ■ Introductionmentioning

confidence: 99%

Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr_1–xV_x)₂O₃

Rodriguez-Fano,

Haydoura,

Tranchant

et al. 2023

ACS Appl. Mater. Interfaces

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“…5 goes beyond the specific case of V2O3, and can be applied in many quantum materials with phase transitions involving elastic deformations [48]. This could also guide the assessment of the ultimate performance of ultrafast devices based on Mott insulators [49,50]…”

Section: Central Role Of Volume Contraction In Imtmentioning

confidence: 99%

Propagating insulator-to-metal transition in the wake of photoinduced strain waves in a Mott material

Amano,

Babich,

Mandal

et al. 2023

Preprint

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Ultrafast physics opens new avenues for directing materials to different functional macroscopic states on non-thermal dynamical pathways. In any phase transition involving volume and/or ferroelastic deformation, an often overlooked mechanism emerges whereby photoinduced elastic waves drive the transition. However, a comprehensive physical picture of transformation dynamics which includes acoustic scale propagation remained elusive. Here we show that such a strain wave mechanism drives the ultrafast insulator-to-metal phase transition (IMT) in the V2O3 Mott material. We discuss the underlying physics based on time-resolved optical reflectivity and X-ray diffraction probing granular thin films. We evidence the role of strain wave mechanisms in ultrafast changes either with or without symmetry breaking. We reveal inverse ferroelastic shear occurring before the IMT propagating in the wake of compressive strain wave. These dynamics are shown to be governed by the domain size and the film thickness, respectively. A fluence threshold is evidenced for the onset of IMT at macroscopic scale, as well as phase separation at intermediate fluence and complete transformation at saturating fluence. We clarify the morphological conditions for the ultrafast IMT that is favoured in granular thin films, and hindered in single crystals. The resulting physical picture shed new light on ultrafast phase transitions in quantum materials and future devices based ond Mott insulators.

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Porphyrin‐Based Metal–Organic Frameworks for Neuromorphic Electronics

et al. 2022

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Porphyrin‐based metal–organic frameworks (PP‐MOFs) have some special features beyond ordinary MOFs, including superior optoelectronic characteristics, the ability to form 2D layered structure, and customizability, which prompt the increasing attention of PP‐MOFs in the field of neuromorphic electronics. The related application research is in the initial stage, and a timely summary and guidance are necessary. The PP‐MOFs fabrication should be shifted from powder synthesis in a chemistry laboratory to high‐quality film preparation under a clean environment to ensure device performance. This article highlights the PP‐MOFs film preparation methods and the application advances in neuromorphic electronics, performs comparative analysis in detail, and puts forward the challenges and future research directions, with the aim to attract the attention of experts in various areas (e.g., chemists, materials scientists, and engineers) and promote the application of PP‐MOFs in neuromorphic electronics.

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Correlated transition metal oxides and chalcogenides for Mott memories and neuromorphic applications

Cited by 3 publications

References 158 publications

Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr_1–xV_x)₂O₃

Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr_1–xV_x)₂O₃

Propagating insulator-to-metal transition in the wake of photoinduced strain waves in a Mott material

Porphyrin‐Based Metal–Organic Frameworks for Neuromorphic Electronics

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Correlated transition metal oxides and chalcogenides for Mott memories and neuromorphic applications

Cited by 3 publications

References 158 publications

Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr1–xVx)2O3

Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr1–xVx)2O3

Propagating insulator-to-metal transition in the wake of photoinduced strain waves in a Mott material

Porphyrin‐Based Metal–Organic Frameworks for Neuromorphic Electronics

Contact Info

Product

Resources

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Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr_1–xV_x)₂O₃

Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr_1–xV_x)₂O₃