Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr1–xVx)2O3
Michael Rodriguez-Fano,
Mohamad Haydoura,
Julien Tranchant
et al.
Abstract:Memories
based on the insulator-to-metal transition in
correlated
insulators are promising to overcome the limitations of alternative
nonvolatile memory technologies. However, associated performances
have been demonstrated so far only on narrow-gap compounds, such as
(V0.95Cr0.05)2O3, exhibiting
a tight memory window. In the present study, V-substituted Cr2O3 compounds (Cr1–x
V
x
)2O3 have
been synthesized and widely investigated in thin films, single crystals,
and polycrystalline powders, for the whole range … Show more
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