2021
DOI: 10.1016/j.apsusc.2020.147906
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Correlated effects of fluorine and hydrogen in fluorinated tin oxide (FTO) transparent electrodes deposited by sputtering at room temperature

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Cited by 4 publications
(3 citation statements)
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“…The spray pyrolysis method is a relatively cost-effective method used in preparing FTO compared to other methods such as pulsed laser deposition, 23 chemical vapor deposition (CVD), 24 sputtering methods, and DC magnetron sputtering. 25,26 Several parameters should be carefully controlled during the preparation of the FTO film by spray pyrolysis to optimize optical and electrical properties. Those are tin-and fluorinedopant concentrations in the precursor solution, the temperature of the glass substrate, gas carrier flow rate, the time between two spray cycles, the distance between the substrate and spray gun, and the type of solvent.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…The spray pyrolysis method is a relatively cost-effective method used in preparing FTO compared to other methods such as pulsed laser deposition, 23 chemical vapor deposition (CVD), 24 sputtering methods, and DC magnetron sputtering. 25,26 Several parameters should be carefully controlled during the preparation of the FTO film by spray pyrolysis to optimize optical and electrical properties. Those are tin-and fluorinedopant concentrations in the precursor solution, the temperature of the glass substrate, gas carrier flow rate, the time between two spray cycles, the distance between the substrate and spray gun, and the type of solvent.…”
Section: ■ Introductionmentioning
confidence: 99%
“…The chemical reactants are selected such that the products, other than the desired compound, are volatile at the deposition temperature. The spray pyrolysis method is a relatively cost-effective method used in preparing FTO compared to other methods such as pulsed laser deposition, chemical vapor deposition (CVD), sputtering methods, and DC magnetron sputtering. , …”
Section: Introductionmentioning
confidence: 99%
“…[8] For instance, Morá n-Pedroso et al reported FTO films deposited at room temperature by sputtering in an atmosphere containing H2 with optimized sheet resistance of ∼ 20 Ω/ . [9] Zhu et al [10] obtained minimum resistivity of 8.5 × 10 −3 Ω•cm for FTO films prepared at 150 ∘ C and 300 ∘ C. Wu et al [11] obtained an FTO film with low resistivity of 5.4×10 −3 Ω•cm.…”
mentioning
confidence: 99%