CORONA-OXIDE-SEMICONDUCTOR device CHARACTERIZATION

Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

“…Gating by corona discharge has been widely used in semiconductor industry to control carrier concentration in oxidized semiconductors in a contact-less fashion. [20][21][22][23] In this technique, the metallic gate of a FET is replaced by ions deposited on the dielectric layer, which induce a surface charge density on the underlying semiconductor. A corona discharge can be generated by applying a high voltage to a sharp tip or wire to generate an electrical discharge which ionizes the surrounding gas.…”

Corona charging damage on thermal Si/SiO2 structures with nm-thick oxides revealed by electron spin resonance

“…Finally, in a critical view, one might remark that rather than ESR, pertinent electrical probing techniques, such as the high sensitivity currentvoltage (I-V ) and conductance-voltage (G-V ) measurements, would provide more adequate tools for probing the impact of corona charging on the intrinsic properties of the Si/SiO 2 system. In fact, it has been studied that way, albeit mostly for thick oxides [3,16,17]; obviously, what ultimately matters is the electrical quality of the studied MOS entity. However, superb as they are, in addition to generally providing only information on the net charge (sum of positive and negative traps) present, these methods inherently lack specificity in assessing the atomic nature of the point defects at the origin of occurring traps and charges.…”

Application of Non-contact Corona-Kelvin metrology for Characterization of Plasma Nitrided SiO[sub 2]

“…This is different from the trend of D it . One may notice that D it is the density of interface traps with respect to energy, while Q it is the net electric charge in the interface traps per cm 2 . When donor and acceptor traps are present, the Qit can be much smaller than the integrated D it due to charge compensation.…”

“…The high precision x,y stage then contact, preparation free electrical characterization that positions the test site underneath either the microis much faster and cost effective than previously used Kelvin probe or the micro-corona gun for the voltage MOS diagnostics [2,3]. Until recently, corona-Kelvin measurement or the corona charging, respectively.…”