Core–shell diodes for particle detectors

Jia, Guobin; Plentz, Jonathan; Höger, I.; Dellith, Jan; Dellith, Andrea; Falk, F.

doi:10.1088/0022-3727/49/6/065106

Cited by 5 publications

(8 citation statements)

References 48 publications

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“…Perspectively, highly efficient solar cells could be realized on pc-Si thin film with further optimization of the morphology of the nanowires in a controlled way by nanosphere lithography [28] or by a bifacial configuration. [29] The concept of large-area contact of individual nanowires could be very interesting for the fabrication of MEMS devices with high aspect ratio structure, and could be also a solution for the contact issue of very densely packed photodiode arrays consisting of isolated individual radial or axial junction nanowires, which will be used for high-performance particle detectors or imaging sensors with ultrahigh spatial resolution, [30,31] so that the signal generated from single nanowires can be recorded separately, and this is up to now very challenging.…”

Section: Light Beam-induced Current Mappingmentioning

confidence: 99%

Self‐Regulating Process for Large Area Nanowire Solar Cells Based on Thin Polycrystalline Silicon Films Prepared on Glass

Jia

Gawlik

Dellith

et al. 2023

Physica Status Solidi (a)

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Herein, a process for the large‐area passivating and contacting of nanowire‐based solar cells is demonstrated. The nanowire‐based solar cells are prepared on layered laser crystallization (LLC) polycrystalline silicon (pc‐Si) thin films with thickness less than 2 μm. It is demonstrated that the space between the nanowires can be filled with a passivating dielectrics Al2O3 layer, and the nanowire tips can be exposed by a self‐regulating selective etching of the Al2O3 deposited on the tips and that on the sidewalls. The exposed tips of the nanowires can be connected by a transparent conducting aluminum‐doped zinc oxide (Al:ZnO or AZO) layer deposited by atomic layer deposition (ALD). The laser beam‐induced current mapping (LBIC) demonstrates that the current density can increase up to 63% at 633 nm due to light trapping and the superior passivation of the nanowires with an thin pc‐Si film of only 1.73 μm.

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Section: Light Beam-induced Current Mappingmentioning

confidence: 99%

Self‐Regulating Process for Large Area Nanowire Solar Cells Based on Thin Polycrystalline Silicon Films Prepared on Glass

Jia

Gawlik

Dellith

et al. 2023

Physica Status Solidi (a)

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“…This is due to the fact that light absorption [23] will be significantly enhanced by light trapping of the densely packed nanowire array [24]. Additionally, the carrier recombination in the bulk will be greatly reduced because of the short collection path of the generated carriers [16,22,25], which is only in the range of the radii of the nanowires. Moreover, the core is mostly depleted so that the defects are empty (no carriers are trapped in the defects); therefore, almost no Shockley-Read-Hall recombination takes place in the core even if it is very defective.…”

Section: Laser Crystallization Of An Additional A-si Layermentioning

confidence: 99%

Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching

Jia

Plentz

Gawlik

et al. 2018

International Journal of Photoenergy

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In this study, laser-treated polycrystalline Si (pc-Si) wafers, fabricated by wire sawing of hot-pressed ingots sintered from Si powder, have been investigated. As-cut wafers and those with high-quality thin Si layers deposited on top of them by e-beam have been subjected to laser irradiation to clarify typical trends of structural modifications caused by laser treatments. Moreover, possibility to use laser-treated Si powder-based substrates for fabrication of advanced Si structures has been analysed. It is established that (i) Si powder-based wafers with thicknesses~180 μm can be fully (from the front to back side) or partly (subsurface region) remelted by a diode laser and grain sizes in laser-treated regions can be increased; (ii) a high-quality top layer can be fabricated by crystallization of an additional a-Si layer deposited by e-beam evaporation on top of the pc-Si; and (iii) silicon nanowires can be formed by metal-assisted wet chemical etching (MAWCE) of polished Si powder-based wafers and as-cut wafers irradiated with medium laser power, while a surface texturing on the as-cut pc-Si wafers occur, and no nanowires can form in the region subject to a liquid phase crystallization (LPC) caused by high-power laser treatments.

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“…In our previous paper [2], we have theoretically analyzed a 3-dimensional (3D) core-shell diode array concept for imaging sensor and particle detector applications. This sensor consists of semiconductor rods with a variety of junction prepared around them forming the core-shell diodes, and the sketch in figure 1b shows one example in case of pn-junction using n + -Si as the shell and p-Si as the core.…”

Section: Introductionmentioning

confidence: 99%

“…This sensor consists of semiconductor rods with a variety of junction prepared around them forming the core-shell diodes, and the sketch in figure 1b shows one example in case of pn-junction using n + -Si as the shell and p-Si as the core. A prototype of the core-shell diode array has been prepared by modern nanotechnology [2,3], and the functionality has been tested by electron beam induced current (EBIC).…”

Section: Introductionmentioning

confidence: 99%

“…Different to the planar case with pn-junction just prepared on the top surface of the wafer, the pn-junction of the 3D devices is fabricated covering around the rods, forming the so-called core-shell (CS) diode (array) [2,4] in a 3D configuration. This novel CS diode (array) is predicted to have many superior properties, like high radiation hardness, low power consumption, high spatial resolution, high sensitivity, and fast signal response [2].…”

Section: Introductionmentioning

confidence: 99%

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Core-shell diode array for high performance particle detectors and imaging sensors: status of the development

et al. 2017

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We propose a novel high performance radiation detector and imaging sensor by a ground-breaking core-shell diode array design. This novel core-shell diode array are expected to have superior performance respect to ultrahigh radiation hardness, high sensitivity, low power consumption, fast signal response and high spatial resolution simultaneously. These properties are highly desired in fundamental research such as high energy physics (HEP) at CERN, astronomy and future x-ray based protein crystallography at x-ray free electron laser (XFEL) etc.. This kind of detectors will provide solutions for these fundamental research fields currently limited by instrumentations.In this work, we report our progress on the development of core-shell diode array for the applications as high performance imaging sensors and particle detectors. We mainly present our results in the preparation of high aspect ratio regular silicon rods by metal assisted wet chemical etching technique. Nearly 200 µm deep and 2 µm width channels with high aspect ratio have been etched into silicon. This result will open many applications not only for the core-shell diode array, but also for a high density integration of 3D microelectronics devices.

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Core–shell diodes for particle detectors

Cited by 5 publications

References 48 publications

Self‐Regulating Process for Large Area Nanowire Solar Cells Based on Thin Polycrystalline Silicon Films Prepared on Glass

Self‐Regulating Process for Large Area Nanowire Solar Cells Based on Thin Polycrystalline Silicon Films Prepared on Glass

Silicon Powder-Based Wafers for Low-Cost Photovoltaics: Laser Treatments and Nanowire Etching

Core-shell diode array for high performance particle detectors and imaging sensors: status of the development

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