Self‐Regulating Process for Large Area Nanowire Solar Cells Based on Thin Polycrystalline Silicon Films Prepared on Glass

Abstract

Herein, a process for the large‐area passivating and contacting of nanowire‐based solar cells is demonstrated. The nanowire‐based solar cells are prepared on layered laser crystallization (LLC) polycrystalline silicon (pc‐Si) thin films with thickness less than 2 μm. It is demonstrated that the space between the nanowires can be filled with a passivating dielectrics Al2O3 layer, and the nanowire tips can be exposed by a self‐regulating selective etching of the Al2O3 deposited on the tips and that on the sidewalls. The exposed tips of the nanowires can be connected by a transparent conducting aluminum‐doped zinc oxide (Al:ZnO or AZO) layer deposited by atomic layer deposition (ALD). The laser beam‐induced current mapping (LBIC) demonstrates that the current density can increase up to 63% at 633 nm due to light trapping and the superior passivation of the nanowires with an thin pc‐Si film of only 1.73 μm.