Core level photoemission study of polycrystalline MgB2

Garg, K. B.; Chatterji, Tapan; Dalela, S.; Heinonnen, M; Leiro, J.A.; Dalela, B.; Singhal, R. K.

doi:10.1016/j.ssc.2004.01.006

Cited by 28 publications

(37 citation statements)

References 20 publications

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“…The B1s spectrum before sputtering (t = 0) is composed of two peaks of similar intensity (BE = 192.4 and 187.8 eV) that are assigned to oxide and boride, respectively. Obtained BE values of Mg2p and B1s peaks are in good agreement with most of the literature data, [9][10][11] however they are noticeably higher than the values indicated in the paper by Vasquez et al [7] No theoretically predicted charge-transfer satellites [19] have been observed in Mg2p…”

Section: Films Deposited Using Cvdsupporting

confidence: 89%

“…[9][10][11] The MgKLL spectrum, registered at t = 0, also indicates the presence of two chemical species; magnesium oxide at KE = 1179.9 eV, and a low amount of magnesium boride at KE = 1182.5 eV. value of oxide is comparable with the reference sample and literature data, [18] while the KE values of boride differ from the reference samples, suggesting that the compound could be non-stoichiometric.…”

Section: Films Deposited Using Cvdsupporting

confidence: 67%

“…[7,9,10] The XPS signals of boron oxide (BE = 193.3 eV) and boride (BE = 188.4 eV) can be easily separated by the peakfitting of the B1s spectrum, while the MgO and boride peaks are overlapped in the Mg2p line (∼51.0 eV). It is rather difficult, therefore, to determine the sample stoichiometry from the XPS measurements alone.…”

Section: Reference Samplesmentioning

confidence: 99%

“…Even the surface of crystalline MgB 2 films, cleaned by non-aqueous chemical etching, contained impurities of magnesium hydroxide and carbonate. [7] Moreover, the binding energy (BE) values of Mg2p and B1s peaks, measured for crystalline MgB 2 films, [7,8] are controversial, with these values determined for polycrystalline MgB 2 samples [9][10][11] and other transition metal diborides. [12,13] Therefore, the question of whether it is possible to obtain experimentally pure and stoichiometric MgB 2 , remained open till now.…”

Section: Introductionmentioning

confidence: 99%

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Study of Magnesium Boride Films Obtained From Mg(BH₄)₂ by CVD

Crociani¹,

Rossetto²,

Kačiulis³

et al. 2007

Chemical Vapor Deposition

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Magnesium boride films are synthesized from Mg(BH 4 ) 2 by CVD. A new synthesis of the precursor is developed. Deposition time of the samples is varied to study its influence on film composition. The films are analyzed by means of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The contributions of various chemical species (boride and oxides) in the depth profiles, carried out using Ar ion sputtering combined with cyclic XPS measurements, are separated by peak-fitting analysis of photoelectron B1s and Auger MgKLL spectra. The samples are composed of MgB x film covered by an overlayer of magnesium and boron oxides.

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Section: Films Deposited Using Cvdsupporting

confidence: 89%

Section: Films Deposited Using Cvdsupporting

confidence: 67%

Section: Reference Samplesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Study of Magnesium Boride Films Obtained From Mg(BH₄)₂ by CVD

Crociani¹,

Rossetto²,

Kačiulis³

et al. 2007

Chemical Vapor Deposition

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“…As it can be seen from the B 1s and Mg KLL spectra, the sample remained partially oxidized even after such a long time of intense sputtering, which can be explained [9,11,12] by the granular structure of the pressed powder. The signals of oxide [11,12] (BE = 193.3 eV) and boride [11 -13] (BE = 188.4 eV) can be easily separated by the peak fitting of the B 1s spectrum, while MgO and boride peaks are overlapped in Mg 2p line (∼51.0 eV). Therefore, it is rather difficult to determine the sample stoichiometry only from the XPS measurements.…”

Section: Reference Samplesmentioning

confidence: 99%

Chemical composition of magnesium boride films obtained by CVD

Crociani

Carta

Kačiulis

et al. 2008

Surface & Interface Analysis

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The films of magnesium boride were grown on Si(100) substrate by chemical vapor deposition, starting from the synthesis of the single-source precursor Mg(BH 4 ) 2 . The deposition time was varied to study its influence on the film composition. The chemical composition of produced samples was investigated by the XPS technique. The depth profiling of MgB x films was carried out by using Ar ion sputtering combined with cyclic XPS measurements. The contributions of different chemical species (boride and oxides) in the depth profiles were separated by peak-fitting analysis of photoelectron B 1s and Auger Mg KLL spectra. In order to determine the correct parameters of peak fitting, the reference samples of MgB 2 and MgO were studied as well. The produced samples were composed of MgB x film covered by an overlayer of magnesium and boron oxides, whose thickness was increasing with deposition time. The surface of the films was enriched with magnesium, while the volume was characterized by the B : Mg ratio exceeding 2. XPS results confirmed that the bulk decomposition of Mg(BH 4 ) 2 precursor was successful; therefore, some other phenomenon, such as Mg segregation, was responsible for the formation of MgB x films with x > 2. In addition, a prolonged deposition time resulted in a thicker surface overlayer of Mg and B oxides, but it did not change the stoichiometry of the boride film.

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