Copper oxide quantum dot ink for inkjet-driven digitally controlled high mobility field effect transistors

Vaseem, Mohammad; Hong, A-Ra; Kim, Ryun-Tak; Hahn, Yoon‐Bong

doi:10.1039/c3tc00869j

Cited by 43 publications

(38 citation statements)

References 61 publications

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“…Research on Cu 2 O has a long history, and the fabrication of Cu 2 O thin films or nanostructures has been widely reported by various techniques, such as PLD, magnetron sputtering, and thermal oxidation; and chemical routes, such as electrodeposition, spin coating, atomic‐layer deposition, spray coating, molecular‐beam epitaxy, microwave irradiation from a Cu precursor, chemical vapor deposition, and ink printing . A summary of the most promising studies on binary copper oxide thin films is shown in Table 2 .…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

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Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

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Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

“…Vaseem et al reported a high‐performance CuO‐based TFT by the inkjet‐printing technique . Copper acetate dihydrate [Cu(CH 3 COO) 2 ·2H 2 O] was used as the precursor.…”

Section: Performance Of P‐type Oxide Thin‐film Transistorsmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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“…The position of the Raman peaks associated with the B1g and A1g vibration modes of TiO2 was influenced by the CuO modification in CuO-TiO2 NTs compared to pristine TiO2 NTs, as can be seen in Figure 7b. However, in addition to the scattering peaks which are assigned to the anatase phase of TiO2, another peak centered at 274 cm −1 is clearly observed (Figure 7c) and is attributed to the CuO phase [49] which is dispersed on TiO2 NTs (Figures 1c,d and 2b). Because of the negative shift of the XPS peaks of Ti 2p to a lower binding energy and the blue shift of the Eg Raman mode of TiO2, it is reasonable to conclude the slight formation of partially-reduced Ti species (Ti 4+ ) by the free electrons left from the oxygen vacancies formed in the CuO-TiO2 NTs.…”

Section: Metal-support Interactionsmentioning

confidence: 99%

A Study of Low-Temperature CO Oxidation over Mesoporous CuO-TiO2 Nanotube Catalysts

2017

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Supported copper oxide nanoparticles have attracted considerable attention as active and non-precious catalysts for many catalytic oxidation reactions. Herein, mesoporous xCuO-TiO 2 nanotube catalysts were fabricated, and their activity and kinetics toward CO oxidation were studied. The morphology and structure of the prepared catalysts were systematically studied using SEM, TEM, EDS, EDX, XRD, TGA, BET, XPS, H 2 -TPR, and Raman techniques. The BET surface area study revealed the effect of the large surface area of the mesoporous TiO 2 nanotubes on promoting the catalytic activity of prepared catalysts. The results also revealed the existence of strong metal-support interactions in the CuO-TiO 2 nanotube catalyst, as indicated by the up-shift of the E 2g vibrational mode of TiO 2 from 144 cm −1 to 145 cm −1 and the down-shift of the binding energy (BE) of Ti 2p 3/2 from 458.3 eV to 458.1 eV. The active phase of the catalyst consists of fine CuO nanoparticles dispersed on a mesoporous anatase TiO 2 nanotube support. The 50-CuO-TiO 2 nanotube catalyst demonstrated the highest catalytic activity with 100% CO conversion at T 100 = 155 • C and a reaction rate of 36 µmole s −1 g −1 . Furthermore, the catalyst demonstrated excellent long-term stability with complete CO conversion that was stable for 60 h under a continuous stream. The enhanced catalytic activity is attributed to the interplay at the interface between the active CuO phase and the TiO 2 nanotubes support.

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“…14,15 Bulk CuO is known to exhibit antiferromagnetic 16 and multiferroic behavior at low temperature. 19 CuO was earlier synthesized in different dimensions (1-D, 2-D, 3-D), but 1-D nanostructures assume significant importance in regard to their increased efficiency in the transport of electrons and controlled optical and magnetic behavior which have applications in solar cells, 20,21 sensors, [22][23][24] FETs, 25 the next generation Na-ion batteries 26 and spintronic devices. 19 CuO was earlier synthesized in different dimensions (1-D, 2-D, 3-D), but 1-D nanostructures assume significant importance in regard to their increased efficiency in the transport of electrons and controlled optical and magnetic behavior which have applications in solar cells, 20,21 sensors, [22][23][24] FETs, 25 the next generation Na-ion batteries 26 and spintronic devices.…”

Section: Introductionmentioning

confidence: 99%

Fe-induced morphological transformation of 1-D CuO nanochains to porous nanofibers with enhanced optical, magnetic and ferroelectric properties

2015

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The present work reports the synthesis of self-assembled 1-D polycrystalline Fe doped CuO nanostructures (Cu 1Àx Fe x O, x = 0.02 (SP2), 0.05 (SP5), 0.10 (SP10)) using a wet chemical approach. The surface analysis of these nanostructures by X-ray photoelectron spectroscopy indicated Fe to be present as Fe 3+ . The doping of Fe (2 to 10%) causes exchange of Cu in CuO and creates point defects -oxygen vacancies, which are manifested by the change in morphologies of doped nanostructures from nanochains to nanofibers, a reduction in the size of CuO NPs from 19 to 5 nm, the red shifted optical absorption and fluorescence bands associated with an increase in the fluorescence lifetime(s) and blue shifted Raman spectra. The field dependent magnetization (M-H) measurements at room temperature show that for SP10 the magnetization value increases by a factor of about 3 as compared to that of the undoped sample and the superparamagnetic behavior increases with increasing Fe-content. Whereas, at 5 K it exhibits ferromagnetic behavior with increasing values of coercivity (1564 Oe) and retentivity (0.19 emu g À1 ) and exchange bias effect decreasing with increased doping of Fe. The room temperature polarization versus electric field measurements at 200 Hz show weak ferroelectric behavior for all samples and increases with increasing Fe content in the sample. Dielectric constant and dielectric lossshow decreasing values with increasing frequency. A correlation between the observed changes in morphology with optical, magnetic and ferroelectric properties upon doping of Fe has been analyzed.

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Copper oxide quantum dot ink for inkjet-driven digitally controlled high mobility field effect transistors

Cited by 43 publications

References 61 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

A Study of Low-Temperature CO Oxidation over Mesoporous CuO-TiO2 Nanotube Catalysts

Fe-induced morphological transformation of 1-D CuO nanochains to porous nanofibers with enhanced optical, magnetic and ferroelectric properties

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