Copper nitride (Cu3N) thin films deposited by RF magnetron sputtering

Wang, J.; Chen, J.T.; Yuan, Xia; Wu, Zhenli; Miao, Bin; Yan, Pengxun

doi:10.1016/j.jcrysgro.2005.10.107

Cited by 68 publications

(52 citation statements)

References 20 publications

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“…The sharp peaks at *720°C in the ion current curves and the narrow temperature range (*670-800°C) for weight loss in the TG curve (with a maximum weight loss rate at *720°C) indicate thermal decomposition of some chemical compound(s). Cu 3 N, if it is present in the powders, decomposes at *300°C [35,36]. In addition, Cu 2 O is stable and will not decompose to Cu up to a temperature of 1000°C [33,34].…”

Section: Resultsmentioning

confidence: 99%

The influence of oxygen and nitrogen contamination on the densification behavior of cryomilled copper powders during spark plasma sintering

et al. 2010

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It has been found difficult to fully densify some mechanically milled pure metal powders by spark plasma sintering (SPS). In this study, the densification behavior of cryomilled, nanostructured (NS) Cu powders during SPS was related to changes to the chemistry of the powders. The results showed that the presence of very small amounts of O and N in the powders, which were introduced during cryomilling and handling, significantly influenced the densification response. Moreover, reduction/removal of O/N via thermal annealing of the powders before SPS led to complete densification of the powders during subsequent SPS. The mechanisms responsible for this behavior were ascertained: O and N existed in the cryomilled powders in the form of thermally unstable compounds, and the subsequent thermal decomposition of these compounds during SPS generated the gaseous species, leading to porosity formation and incomplete densification; annealing of the powders before SPS removed the gases which resulted from thermal decomposition, thereby facilitating complete consolidation during subsequent SPS.

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Section: Resultsmentioning

confidence: 99%

The influence of oxygen and nitrogen contamination on the densification behavior of cryomilled copper powders during spark plasma sintering

et al. 2010

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“…[1][2][3] As reported by Borsa et al, Cu 3 N is also an interesting candidate as an insulating barrier in magnetic tunnel junctions. [4] In recent years, Cu 3 N thin films have been prepared by a number of different techniques; reactive RF magnetron sputtering methods, [5][6][7][8][9][10][11] reactive pulsed laser deposition, [12,13] reactive DC magnetron sputtering, [14] molecular beam epitaxy (MBE), [15] and atomic layer deposition (ALD). [16,17] For example, Tö rndahl et al used…”

Section: Introductionmentioning

confidence: 99%

CVD of Copper(I) Nitride

Fallberg

Ottosson

Carlsson

2009

Chemical Vapor Deposition

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Copper(I) nitride (Cu 3 N) is deposited by CVD using copper(II) hexafluoroacetylacetonate (Cu(hfac) 2 ), ammonia, and water as precursors. The influences of process parameters on growth rate, phase content, chemical composition and morphology are studied. The introduction of water is found to increase film growth rate on the SiO 2 substrate. Films are deposited in the temperature range 250-550 -C. Single-phase Cu 3 N is obtained up to 400 -C. A phase mixture of Cu 3 N and Cu is obtained at 425 -C, while a temperature of 550 -C and above yields single-phase Cu. X-ray diffraction (XRD) confirms that Cu 3 N has the cubic, antiReO 3 -type structure; with a cell parameter in the range 3.805-3.816 Å . X-ray photoelectron spectroscopy (XPS) verifies the Cu 3 N stoichiometry. The films are free from impurities (below the detection limit of 1%) at a large excess of ammonia. Scanning electron microscopy (SEM) shows facetted grains, with the faces becoming more well-defined at higher temperatures.

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“…In spite of the promising properties of Cu 3 N, the large discrepancies reported in literature about its measured physical properties have hampered the implementation of reliable technological devices. As an example, the electric conductivity has been reported to range from a quasi-metallic [7][8][9][10][11][12] (10 3 fl _1 cm"') to a semiconducting behavior [13][14][15][16][17] (10 _3 fl _1 cm -1 ) and the optical energy gap values cover a wide range [15][16][17][18][19] (0.9-1.9 eV). This dispersion of data could be mostly attributed to differences in the stoichiometry of the films, which in most works has not been appropriately characterized.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of copper nitrides as a function of nitrogen content

et al. 2013

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The nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26 ± 2 to 33 ± 2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu 3 N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from -5 to -50 uV/K in the Seebeck coefficient and to large enhancements, from 10~3 up to 10 O cm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results.

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Copper nitride (Cu3N) thin films deposited by RF magnetron sputtering

Cited by 68 publications

References 20 publications

The influence of oxygen and nitrogen contamination on the densification behavior of cryomilled copper powders during spark plasma sintering

The influence of oxygen and nitrogen contamination on the densification behavior of cryomilled copper powders during spark plasma sintering

CVD of Copper(I) Nitride

Electronic structure of copper nitrides as a function of nitrogen content

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