CVD of Copper(I) Nitride

Fallberg, Anna; Ottosson, Mikael; Carlsson, Jan‐Otto

doi:10.1002/cvde.200906794

Cited by 30 publications

(27 citation statements)

References 30 publications

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“…It is interesting to note that the film microstructure, even at high Ni content, resembles the microstructure of the CVD Cu 3 N obtained under high ammonia partial pressures. [23] The microstructure of the phase mixture in the film with 87% Ni is less dense and has smaller, less facetted grains. The microstructure rather resembles the one observed for pure Ni 3 N deposited by conventional CVD (Fig.…”

Section: Microstructurementioning

confidence: 99%

“…[23] Sputter cleaning of the surface for removal of surface contaminants prior to the analysis results in the decomposition of the nitride and release of nitrogen. The decomposition of the nitride can be reduced considerably by using a low, as low as possible, ionsputter energy.…”

Section: Chemical Compositionmentioning

confidence: 99%

“…[22][23][24] The CVD processes have overlapping temperature and total pressure regions to reach surface kinetics control. This paper shows that by switching between these two CVD processes with NH 3 purges in between, a new solid solution, denoted by Cu 3-x Ni xþy N to indicate that both interstitial and substitutional solid solution is possible, can be grown.…”

Section: Full Papermentioning

confidence: 99%

“…When increasing the Cu(hfac) 2 partial pressure only a slight increase in the growth rate (a few percent) was observed, which is in agreement with earlier reported results for the conventional, continuous flow Cu 3 N CVD process. [17] In the conventional CVD of Cu 3 N, growth rates of about 5 nm min À1 have been reported, [23] however the pulsed work presented here with nickel involved, gives growth rates in the range 13-370 nm min À1 (Cu(hfac) 2 þ NH 3 ) exposure, depending on (Ni(thd) 2 þ NH 3 ) pulse times. With longer pulse times, more Ni 3 N is deposited and the CuÀNiÀN solid solution becomes more metallic.…”

mentioning

confidence: 93%

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Gas‐Pulsed CVD for Film Growth in the CuNiN System

Lindahl

Ottosson

Carlsson

2012

Chemical Vapor Deposition

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A new ternary solid solution, Cu 3-x Ni xþy N, is prepared by gas-pulsed CVD at 260 8C. Gas pulses of the precursor mixtures Cu(hfac) 2 þ NH 3 and Ni(thd) 2 þ NH 3 , separated by intermittent ammonia pulses, are employed for the deposition of Cu 3 N and Ni 3 N, respectively. A few monolayers of the nitrides are grown in each CVD pulse and then mixed by diffusion to produce the solid solution. The metal content of the solid solution can be varied continuously from 100% to about 20% Cu, which means that the electrical properties can be varied from 1.6 eV (band gap of Cu 3 N) to metallic (Ni 3 N). This is of interest for various applications, e.g., solar energy, catalysis, and microelectronics.

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Section: Microstructurementioning

confidence: 99%

Section: Chemical Compositionmentioning

confidence: 99%

Section: Full Papermentioning

confidence: 99%

mentioning

confidence: 93%

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Gas‐Pulsed CVD for Film Growth in the CuNiN System

Lindahl

Ottosson

Carlsson

2012

Chemical Vapor Deposition

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“…Stoichiometric, copper-, or nitrogen-rich films may all be prepared, with excess copper or nitrogen atoms likely incorporated in the body-center position or at grain boundaries [15,21]. Preferential orientation is often seen in x-ray diffraction of Cu 3 N films [10,22], with (111)-and (100)-oriented films prepared at respectively lower and higher substrate temperatures [23]. Because (111) planes comprise only nitrogen atoms, while (100) planes feature predominantly copper atoms, liberation of the predominant atoms from the surface leaves (111)-and (100)-oriented films which are respectively Cu and N rich [16,17,24].…”

Section: Introductionmentioning

confidence: 99%

Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitrideCu3N

et al. 2017

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The temperature-dependence of the direct band gap and thermal expansion in the metastable anti-ReO 3 semiconductor Cu 3 N are investigated between 4.2 and 300 K by Fourier-transform infrared spectroscopy and x-ray diffraction. Complementary refractive index spectra are determined by spectroscopic ellipsometry at 300 K. A direct gap of 1.68 eV is associated with the absorption onset at 300 K, which strengthens continuously and reaches a magnitude of 3.5×10 5 cm −1 at 2.7 eV, suggesting potential for photovoltaic applications. Notably, the direct gap redshifts by just 24 meV between 4.2 and 300 K, giving an atypically small band-gap temperature coefficient dE g /dT of −0.082 meV/K. Additionally, the band structure, dielectric function, phonon dispersion, linear expansion, and heat capacity are calculated using density functional theory; remarkable similarities between the experimental and calculated refractive index spectra support the accuracy of these calculations, which indicate beneficially low hole effective masses and potential negative thermal expansion below 50 K. To assess the lattice expansion contribution to the band-gap temperature-dependence, a quasiharmonic model fit to the observed lattice contraction finds a monotonically decreasing linear expansion (descending past 10 −6 K −1 below 80 K), while estimating the Debye temperature, lattice heat capacity, and Grüneisen parameter. Accounting for lattice and electron-phonon contributions to the observed band-gap evolution suggests average phonon energies that are qualitatively consistent with predicted maxima in the phonon density of states. As band-edge temperature-dependence has significant consequences for device performance, copper nitride should be well suited for applications that require a largely temperature-invariant band gap.

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Advances in Deposition of Metals from Metal Enolates

Lang

Adner

Georgi

2016

Patai's Chemistry of Functional Groups

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This chapter describes the use of metal enolates as precursors for the deposition and growth of nano‐sized materials of a large variety of metal, mixed metal‐metal oxide, and alloy layers and patterns, an area that has rapidly developed during the last couple of decades. As metal enolates, mostly mononuclear main group, transition metal, and rare earth metal complexes featuring various β‐diketonate or β‐ketoiminate ligands have been used. Based on their intrinsic properties, for example, reactivity, transparency, conductivity, and magnetism, a large variety of metal and/or metal oxide deposits are available at present. As deposition processes, mainly gas‐phase (e.g., CVD2–9 and ALD8–19) or liquid‐phase procedures (including spin‐coating, dip‐coating, sol–gel, and printing techniques) were used. Controlled decomposition of the appropriate metal enolates allows the generation of diverse metal and metal oxide materials, for example, dense or porous thin layers and nanomaterials in the form of particles, dots, rods, tubes, and wires. Where appropriate, the similarities and differences, including elementary decomposition steps that are common for the respective metal enolate precursors, are discussed as well.

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CVD of Copper(I) Nitride

Cited by 30 publications

References 30 publications

Gas‐Pulsed CVD for Film Growth in the CuNiN System

Gas‐Pulsed CVD for Film Growth in the CuNiN System

Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitrideCu3N

Advances in Deposition of Metals from Metal Enolates

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