Copper-Indium-Boron-Diselenide Absorber Materials

Ianno, N. J.; Soukup, R. J.; Santero, Tobin; Kamler, C. A.; Huguenin-Love, James; Darveau, Scott A.; Olejníček, J.; Exstrom, Christopher L.

doi:10.1557/proc-1012-y03-21

Cited by 6 publications

(5 citation statements)

References 9 publications

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“…It has also been found that there are few experimental studies of alloys, especially related to CuInBSe 2 , in the literature. [21][22][23] On the other hand, the structural lattice parameters and electronic band gap energies of CuBX 2 chalcopyrite materials have been calculated theoretically using informatics-based approaches. 11,24 The electronic structures of CuBS 2 and CuBSe 2 have also been presented in terms of the density functional theory.…”

Section: Introductionmentioning

confidence: 99%

Structural, electronic, optical, vibrational and transport properties of CuBX₂ (X = S, Se, Te) chalcopyrites

et al. 2016

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The structural, electronic and optical properties of CuBX 2 (X=S,Se,Te) chalcopyrite semiconductors have been studied using the full potential (linearized) augmented plane wave (FP(L)APW) method based on the density functional theory (DFT) within the Yukawa Screened-PBE0 (YS-PBE0) hybrid function as implemented in the WIEN2k. We have found that our calculated structural and electronic parameters such as lattice parameter, tetragonal ratio, anion displacement and energy band gap are in very good agreement with previous experimental results. We have also presented real and imaginary part of the dielectric function, refractive index and absorption coefficients to describe optical properties of calculated chalcopyrite semiconductors. Furthermore, the phonon dispersion curves and corresponding density of states have been studied by using a linear response approach based on the density functional perturbation theory implemented in the Quantum Espresso code. Finally, the transport properties such as Seebeck coefficient, thermal and electrical conductivity and the figure of merit for these materials have been calculated using the semi-classical Boltzmann theory as implemented in the BoltzTraP code.

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Section: Introductionmentioning

confidence: 99%

Structural, electronic, optical, vibrational and transport properties of CuBX₂ (X = S, Se, Te) chalcopyrites

et al. 2016

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“…Although there is a trail off at lower energy, the straight line portion of the curve is quite evident and yields a bandgap of 3.03 eV. This result is encouraging since the predicted bandgap for CuBSe2 was 3.17 eV [6]. However, the Raman spectrum for this film was less encouraging.…”

Section: In-situ Selenization Depositionmentioning

confidence: 68%

“…Although no CulnxB1-xSe2 (CIBS) films have been reported, a simple approach was used to estimate that the amount of B substitution needed to reach a bandgap of 1.37 eV. This calculation showed that less than 19% B is needed [6). The copper, indium and boron materials in the films were deposited simultaneously and sequentially in respective methods.…”

Section: Introductionmentioning

confidence: 99%

Ex-situ and in-situ selenization of copper-indium and copper-boron thin films

Soukup

Ianno

Kamler

et al. 2008

2008 33rd IEEE Photovolatic Specialists Conference

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It has recently been established that the ideal bandgap for terrestrial photovoltaics is 1.37 eV and the bandgap for CulnSe2 is only around 1.04 eV. Thus, a larger bandgap is needed. However, neither the substitution of Ga nor of AI has made a high efficiency solar cell absorber with a band gap of 1.37 eV possible. B, an even smaller atom, should require less atomic substitution than either Ga or AI to achieve a wider bandgap. In order to fabricate a thin film of CulnxB1-xSe2 (CIBS), Cu, In and B were deposited from a variety of sputtering targets which were pure Cu, In, and B; a CU.45ln.ss; and a CU3B2 target.Films were deposited simultaneously and sequentially.After deposition these films were post selenized in another vacuum chamber. Analysis of these films was accomplished using Raman spectroscopy, X-ray diffraction (XRD), and Auger electron spectroscopy (AES). With the difficulties encountered, materials were also deposited in a selenium atmosphere.

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“…(2) using boron and an estimate of the bandgap of CuBSe 2 [6] yields a substitution level for B for In of only 18.6% to yield a bandgap of 1.37 eV. Unfortunately, at this time boron has not been fully introduced into the CIS structure.…”

Section: Introductionmentioning

confidence: 99%

Thin films formed by selenization of CuInxB1−x precursors in Se vapor

Kamler

Soukup

Ianno

et al. 2009

Solar Energy Materials and Solar Cells

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a b s t r a c tPrevious attempts in producing light absorbing materials with bandgaps near the 1.37 eV efficiency optimum have included the partial substitution of gallium or aluminum for indium in the CIS system. The most efficient of these solar cells to date have had absorber layers with bandgapso1.2 eV. It is logical that an even smaller substitutional atom, boron, should lead to a wider bandgap with a smaller degree of atomic substitution. In this study, copper-indium-boron precursor films are sputtered onto molybdenum coated glass substrates and post-selenized. In the selenized films, although X-ray diffraction (XRD) measurements confirm that a CIS phase is present, Auger electron spectroscopy (AES) results indicate that boron is no longer homogeneously dispersed throughout the film as it was in the case of the unselenized precursor.

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Copper-Indium-Boron-Diselenide Absorber Materials

Cited by 6 publications

References 9 publications

Structural, electronic, optical, vibrational and transport properties of CuBX₂ (X = S, Se, Te) chalcopyrites

Structural, electronic, optical, vibrational and transport properties of CuBX₂ (X = S, Se, Te) chalcopyrites

Ex-situ and in-situ selenization of copper-indium and copper-boron thin films

Thin films formed by selenization of CuInxB1−x precursors in Se vapor

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Copper-Indium-Boron-Diselenide Absorber Materials

Cited by 6 publications

References 9 publications

Structural, electronic, optical, vibrational and transport properties of CuBX2 (X = S, Se, Te) chalcopyrites

Structural, electronic, optical, vibrational and transport properties of CuBX2 (X = S, Se, Te) chalcopyrites

Ex-situ and in-situ selenization of copper-indium and copper-boron thin films

Thin films formed by selenization of CuInxB1−x precursors in Se vapor

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Product

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Structural, electronic, optical, vibrational and transport properties of CuBX₂ (X = S, Se, Te) chalcopyrites

Structural, electronic, optical, vibrational and transport properties of CuBX₂ (X = S, Se, Te) chalcopyrites