Copper electrocrystallization mechanism according to morphological data and impedance measurements

Gorbunova, K.M.; Tkachik, Z.A.

doi:10.1016/0013-4686(71)80002-6

Cited by 20 publications

(17 citation statements)

References 13 publications

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“…This more realistic calculation also indicates that good agreement is expected for exchange currents found from Tafel intercepts and the equation Io = (kT/2e) (OI/~l)~=o [13] For the parameters used for Fig. 9, the slope of the current-voltage curve near ~] = 0 is independent of ~4, although the open-circuit potential shifts to --1 mV when 74 = 0.…”

Section: Discussionsupporting

confidence: 58%

“…Many studies have attempted to probe more deeply into electrode kinetics using either pulse (3,4,6,7) or alternating current modulations (8)(9)(10)(11)(12)(13)(14). The former experiments have generally involved large potential excursions (>10 mV), and the interpretation of nonlinear, time-dependent phenomena requires the assumption of a specific model uncomplicated by instrumental or chemical side effects.…”

mentioning

confidence: 99%

“…One might note that, based Iargely upon the interpretation of pulse experiments, adatom diffusion had been credited with playing an important role in copper electrocrystallization near equilibrium (3,6,8,10). Subsequent a-c work revealed that this dispersion could also be explained by diffusion of cuprous ions from the electrode (11)(12)(13)(14).…”

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confidence: 99%

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An Admittance Study of the Copper Electrode

Glarum¹,

Marshall²

1981

J. Electrochem. Soc.

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Section: Discussionsupporting

confidence: 58%

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confidence: 99%

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An Admittance Study of the Copper Electrode

Glarum¹,

Marshall²

1981

J. Electrochem. Soc.

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“…In the case of an adsorbed reactant at an electrode surface, the collision frequency is best modeled as a function of atomic vibration frequency and surface coverage (14,16) Z = (kT/h)Fl,.=, [8] If an adsorbed molecule is involved in the ratedetermining step, the surface coverage may be estimated by (14) F = Z,,,)~)/(kT/h) [9] where Z~,)b~) is experimentally determined from Arrhenius plot extrapolations. The involvement of an adsorbed species in the rate-determining step may be assessed by comparison of surface coverages estimated by this method to independently determined values.…”

Section: Treatment Of Impedance Datamentioning

confidence: 99%

Impedance Behavior of a Sulfuric Acid‐Cupric Sulfate/Copper Cathode Interface

Reid

David

1987

J. Electrochem. Soc.

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The impedance characteristics of a copper disk electrode/sulfuric acid-cupric sulfate interface were investigated and interpreted in terms of equivalent circuit models. A single reaction mechanism, proposed to correspond to the Cu 2+ o Cu § charge transfer, limited deposition rates over a wide current density range at a well-agitated interface. A rate constant of 1.1 • 10 -6 cm/s, a transfer coefficient of 0.5, and a double layer capacitance of 25 jxF/cm 2 were determined from impedance data corresponding to the rate-limiting step. Arrhenius plots yielded an activation energy of 66 kJ/M and a pre-exponential term of approximately 10 ' cm/s. The involvement of a freely diffusing cupric ion in the rate-limiting step was consistent with the observed data, but the possibility of adsorbed species involvement cannot be eliminated. A minor impedance feature, believed to correspond to a relatively fast surface diffusion limited Cu + ~ Cu(O) charge transfer, was observed at low ac frequencies. In quiescent solutions, the observation of a significant Warburg impedance demonstrated that deposition rates became limited by diffusion of cupric ion to the interface.

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“…In this case, a circuit-based model is first fitted to experimental data to obtain values for every circuit component. Then, the circuit components are related to physical or chemical parameters in the system [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%