CoolMOS based high-voltage power supply with PRF up to 200 kHz for metal vapor active media excitation

Abstract

The paper presents the development and investigation of the semiconductor power supply for metal atoms active media excitation with pulse repetition rate up to 200 kHz. The high voltage pulse formation is based on the LTD-generator concept (linear transform driver) with single turn step-up transformer. This PRF equalled 200 kHz when the consumption power was 750 W. The record pulse repetition frequency (PRF) of CuBr active medium excited by semiconductor excitation source was achieved. The mean radiation power was equal to 650 mW under excitation condition: PRF was to 150 kHz and pulse energy input was 160 µJ/cm3.

High-voltage pulse generator based on LTD concept for CuBr+Ne+HBr laser media excitation

“…The design similar to [22] was used to decrease parasitic parameters of each module. Four transistors C2M0160120D were placed around the toroidal transformer with equal step as shown in Fig.…”

“…[16]. Brightness ampli er had to be excited by the excitation source [22]. The size of the master oscillator active element was chosen based on practical experience: the active zone length is 45 cm, the inner diameter is 1,8 cm, the neon pressure is 30 Torr.…”

“…It should be noted that increasing the operating frequency leads to a decrease of excitation source e ciency [20] and complicates the task of engineers and researchers. There are solutions presented in this direction for relatively low frequency 20-40 kHz [21] as well as for relatively high frequency 200 kHz [22]. In these papers the excitation supply power does not exceed 1.5 kW and emission power no more than 2 W. The power supply in [21] was based on typical cells.…”

“…In the paper [22] the authors used another solution -typical cells were placed around step-up transformers. Each cell consisted of a transistor and storage capacitor.…”

Investigation of ASE contribution to copper bromide amplifier output signal

“…The development of system with three pump sources can be variable. There is another approach using composite switch based on semiconductor devices [31][32][33]. Besides it is possible to apply the hybrid high-voltage commutators, for example, combination of modulator lamp (GMI-27B) and MOSFET (STP20N95K5) [34,35] etc.…”