Cooling of hot electron-hole plasmas in the presence of screened electron-phonon interactions

Pugnet, M.; Collet, J.; Cornet, A

doi:10.1016/0038-1098(81)90431-2

Cited by 115 publications

(34 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Through the fitting process described above we can determine the electron and hole densities (their quasi-Fermi energies) and temperature as a function of time. We can therefore calculate the dynamic change in the average energy per carriers using the expression: [27][28][29]…”

Section: Carrier Thermalizationmentioning

confidence: 99%

Strong Hot Carrier Effects in Single Nanowire Heterostructures

et al. 2019

View full text Add to dashboard Cite

We use transient Rayleigh scattering to study the thermalization of hot photoexcited carriers in single GaAs 0.7 Sb 0.3 / InP nanowire heterostructures. By comparing the energy loss rate in single core-only GaAs 0.7 Sb 0.3 nanowires which do not show substantial hot carrier effects with the coreshell nanowires, we show that the presence of an InP shell substantially suppresses the longitudinal optical phonon emission rate at low temperatures which then leads to strong hot carrier effects.

show abstract

Section: Carrier Thermalizationmentioning

confidence: 99%

Strong Hot Carrier Effects in Single Nanowire Heterostructures

et al. 2019

View full text Add to dashboard Cite

show abstract

“…the piezoelectric and deformation-potential interaction) is the main process for hot-carrier cooling. Although the rapid carrier cooling in the first few picoseconds suggested LO-phonon bottleneck [27,28] or carrier-LOphonon screening [29][30][31] may not be effective. It is possible that the fast decay of the LO-phonon leads to a nonequilibrium built up of the acoustic-phonon population (the LO-phonon lifetime was measured to be 4.5 ps at 20 K [32] and should be considerably smaller at room temperature).…”

Section: Resultsmentioning

confidence: 96%

Time-resolved absorption studies of the ZnSe/ZnSTe superlattice

Wang

Sou

Wong

et al. 2001

Superlattices and Microstructures

View full text Add to dashboard Cite

“…The absence of a quasi-equilibrium is the result of a competition between radiative recombination and relaxation to the lower energy states. Since at this lattice temperature the average kinetic energy of the photoexcited carriers is low, the main relaxation processes correspond to carrier scatttering with acoustical phonons via both the piezoelectric interaction and the acoustical deformation potential [16]. Relaxation by emission of acoustical phonon is expected to be strongly reduced in the energy range of the localized states.…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence Study of V-Groove Quantum Wires: The Influence of Disorder on the Optical Spectra and the Carrier Thermalization

Oberli

Vouilloz²,

Ambigapathy³

et al. 2000

phys. stat. sol. (a)

View full text Add to dashboard Cite

We report on time-resolved and steady-state photoluminescence studies of GaAs/AlGaAs V-groove quantum wire structures. Steady-state photoluminescence experiments are performed in the temperature range from 8 to 200 K. We evaluate the relation between photoluminescence excitation and absorption and determine experimentally the optical density in order to analyze the temperature dependence of the photoluminescence spectra. We find that, at a temperature above 60 K, the photoexcited electron±hole pairs reach a thermal equilibrium at the lattice temperature while, at a temperature below about 60 K, they do not reach a quasi-equilibrium in the steady-state. Time-resolved photoluminescence studies performed at a carrier density of about 2 Â 10 4 cm ± ±1 indicate that, at 60 K, a quasi-equilibrium is reached on a time scale of 10 ps. Furthermore, the hot carriers cool in about 100 ps to the lattice temperature. At 8 K, however, evidence of a non-thermal carrier distribution is found at the earliest times, which suggests that carriers in extended states are not in thermal equilibrium with carriers in localized states.

show abstract

Cooling of hot electron-hole plasmas in the presence of screened electron-phonon interactions

Cited by 115 publications

References 17 publications

Strong Hot Carrier Effects in Single Nanowire Heterostructures

Strong Hot Carrier Effects in Single Nanowire Heterostructures

Time-resolved absorption studies of the ZnSe/ZnSTe superlattice

Photoluminescence Study of V-Groove Quantum Wires: The Influence of Disorder on the Optical Spectra and the Carrier Thermalization

Contact Info

Product

Resources

About