Conversion efficiency enhancement of AlGaAs quantum well solar cells

Rimada, Julio C.; Hernández, Leonardo; Connolly, J.P.; Barnham, K.W.J.

doi:10.1016/j.mejo.2007.03.007

Cited by 39 publications

(17 citation statements)

References 18 publications

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“…Advanced methods to bypass the Shockley-Queisser limit include intermediate-band [62,63] and quantum-well solar cells, [64][65][66][67] QD-based cells for multi-carrier generation by impact ionization [68,69] and multiple-junction tandem cells. [70] Furthermore, optical methods such as photon up-and downconversion can be utilized.…”

Section: Quantum Dots For Third-generation Photovoltaicsmentioning

confidence: 99%

Quantum‐Dot‐Sensitized Solar Cells

Rühle¹,

Shalom²,

Zaban³

2010

ChemPhysChem

837

511

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Quantum‐dot‐sensitized solar cells (QDSCs) are a promising low‐cost alternative to existing photovoltaic technologies such as crystalline silicon and thin inorganic films. The absorption spectrum of quantum dots (QDs) can be tailored by controlling their size, and QDs can be produced by low‐cost methods. Nanostructures such as mesoporous films, nanorods, nanowires, nanotubes and nanosheets with high microscopic surface area, redox electrolytes and solid‐state hole conductors are borrowed from standard dye‐sensitized solar cells (DSCs) to fabricate electron conductor/QD monolayer/hole conductor junctions with high optical absorbance. Herein we focus on recent developments in the field of mono‐ and polydisperse QDSCs. Stability issues are adressed, coating methods are presented, performance is reviewed and special emphasis is given to the importance of energy‐level alignment to increase the light to electric power conversion efficiency.

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Section: Quantum Dots For Third-generation Photovoltaicsmentioning

confidence: 99%

Quantum‐Dot‐Sensitized Solar Cells

Rühle¹,

Shalom²,

Zaban³

2010

ChemPhysChem

837

511

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“…An MQWSC with N W wells, each of length L W in the intrinsic region of length W with barrier bandgap Eg B and well bandgap Eg W , was studied in reference . Under these conditions, the current–voltage relation of the MQW cell is given by:

J = J_{0} (1 + r_{normalR} β) [exp (\frac{q V}{k T}) - 1] + (α r_{NR} + J_{normals}) [e x p (\frac{q V}{2 k T}) - 1] - J_{PH}

where q is the electron charge, V is the terminal voltage, kT is the thermal energy, α = q W A B n iB , and

β = \frac{q W B_{normalB} n_{iB}^{2}}{J_{0}}

are parameters defined by Anderson , J 0 is the reverse saturation current density, A B is the non‐radiative coefficient, B B is the barrier recombination coefficient, n iB is the equilibrium intrinsic carrier concentration for the barrier material, r R and r NR are the radiative enhancement ratio and non‐radiative enhancement ratio, respectively, and represent the radiative and non‐radiative recombination increment in the net intrinsic region due to the insertion of the quantum wells.…”

Section: Model Detailsmentioning

confidence: 99%

AlGaAs/GaAs superlattice solar cells

Courel

Rimada

Hernández

2011

Progress in Photovoltaics

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A theoretical model is performed to study the viability of the AlGaAs/GaAs superlattice solar cell (SLSC). Using the Transfer Matrix Method, the conditions for resonant tunneling are established for a particular SL geometry with variably spaced quantum wells. The effective density of states and the absorption coefficient are calculated to determinate the J–V characteristic. Radiative, non‐radiative, and interface recombination were evaluated from a modeled SLSC, and their values were compared with a multiple quantum well solar cell of the same aluminum composition. A discussion about the conditions, where SLSC performance overcomes that of a multiple quantum well solar cell, is addressed. Copyright © 2011 John Wiley & Sons, Ltd.

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“…Furthermore, extra absorption of light at longer wavelengths via sub-band transition can enhance the current density output. These advantages of MQW solar cells make their theoretical efficiency over 50 % [10][11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ZnInON/ZnO multi-quantum well solar cells

et al. 2015

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We report on fabrication and photovoltaic characteristics of solar cells with ZnInON/ZnO multi-quantum wells (MQWs) in the intrinsic layer of p-in structure by RF magnetron sputtering. We employed two kinds of p layers: one is p-GaN and the other is p-Si. Under solar simulator light, the short-circuit current (J sc) and the open-circuit voltage (V oc) of the solar cells on p-GaN templates are 1.9 μA/cm 2 and 0.16 V, whereas J sc and V oc are enhanced to 2.5 μA/cm 2 and 0.19 V under simultaneous irradiation of green laser light (532 nm) and the solar simulator light. Solar cells on p-Si substrates do not show such enhancement. A possible origin of the enhancement is a large piezoelectric field generated in strained ZnInON wells coherently grown on p-GaN template.

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Conversion efficiency enhancement of AlGaAs quantum well solar cells

Cited by 39 publications

References 18 publications

Quantum‐Dot‐Sensitized Solar Cells

Quantum‐Dot‐Sensitized Solar Cells

AlGaAs/GaAs superlattice solar cells

Fabrication of ZnInON/ZnO multi-quantum well solar cells

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