Conversion between Hexagonal GaN and β-Ga₂O₃ Nanowires and Their Electrical Transport Properties

Abstract

We have observed that the hexagonal GaN nanowires grown from a simple chemical vapor deposition method using gallium metal and ammonia gas are usually gallium-doped. By annealing in air, the gallium-doped hexagonal GaN nanowires could be completely converted to beta-Ga(2)O(3) nanowires. Annealing the beta-Ga(2)O(3) nanowires in ammonia could convert them back to undoped hexagonal GaN nanowires. Field effect transistors based on these three kinds of nanowires were fabricated, and their performances were studied. Because of gallium doping, the as-grown GaN nanowires show a weak gating effect. Through the conversion process of GaN nanowires (gallium-doped) --> Ga(2)O(3) nanowires --> GaN nanowires (undoped) via annealing, the final undoped GaN nanowires display different electrical properties than the initial gallium-doped GaN nanowires, show a pronounced n-type gating effect, and can be completely turned off.

The ethanol-sensing properties of porous GaN nanofibers synthesized by electrospinning

“…The diffraction peaks of Ga 2 O 3 before ammoniation can be indexed as monoclinic structure Ga 2 O 3 (or ␤-Ga 2 O 3 ), which is consistent with the reported data (JCPDS No. 41-1103) [22]. The diffraction peaks of GaN-NFs after ammoniation agree well with hexagonal wurtzite structure of GaN (JCPDS No.…”

“…The diffraction peaks of GaN-NFs after ammoniation agree well with hexagonal wurtzite structure of GaN (JCPDS No. 50-0792) and no diffraction peak from any other impurities such as Ga 2 O 3 was observed from the pattern, which confirms the superb purity of the GaN-NFs [22]. It is concluded that ␤-Ga 2 O 3 turns into GaN after ammoniation at 850 • C for 2 h. The reaction equation can be represented as follows:…”

From Understanding Cellular Function to Novel Drug Discovery: The Role of Planar Patch-Clamp Array Chip Technology

“…Various fluidic interfaces have been developed to allow perfusion and cell culture (Li et al, 2006; Matthews and Judy, 2006; Morales et al, 2008; Alberti et al, 2010; Chen et al, 2011). Our chips were mounted in packages machined at low cost from Plexiglas G sheets.…”

Material conversion of GaAs nanowires

“…1 Introduction As potential building blocks for nanoelectric, nanooptical, and nanomechanical devices, nanowires have received considerable attention from the scientific and engineering communities [1,2]. The nanowires were synthesized with various materials such as semiconductors [3,4], metal [5][6][7], oxides [8][9][10], and silicides [11] and their heterostructures [12]; e.g., semiconductor/semiconductor [3,4], semiconductor/metal [13], semiconductor/oxide [14][15][16], metal/metal oxide [17][18][19], metal/metal [5][6][7], metal oxide/metal oxide [8][9][10], and metal oxide/conductive polymer [20].…”