Convenient Real-Time Monitoring of the Contamination of Surface Ion Trap

Zhang, Xinfang; Hou, Yizhu; Chen, Ting; Wu, Wei; Chen, Ping-Xing

doi:10.3390/nano10010109

Cited by 4 publications

(3 citation statements)

References 23 publications

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“…During loading, neutral calcium also travels along the direction indicated by the white arrow in figure 4(a), and can deposit on trap surfaces including the sides of spacers 1 and 3. Adsorbate build-up has been shown to alter stray fields [60,74]. However, we observe that the field remains stable during trap operation, and we do not observe significant stray field drift in the seconds or hours after loading (resolvable by tracking the ion's position on a camera).…”

Section: Measuring Stray Static Electric Fieldsmentioning

confidence: 53%

Industrially microfabricated ion trap with 1 eV trap depth

Auchter

Axline

Decaroli

et al. 2022

Quantum Sci. Technol.

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Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric three-dimensional (3D) structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on stacked 8-inch wafers in a large-scale micro-electro-mechanical system (MEMS) microfabrication process that provides reproducible traps at a large volume. Electrodes are patterned on the surfaces of two opposing wafers bonded to a spacer, forming a 3D structure with 2.5 µm standard deviation in alignment across the stack. We implement a design achieving a trap depth of 1 eV for a 40Ca+ ion held at 200 µm from either electrode plane. We characterize traps, achieving measurement agreement with simulations to within ±5% for mode frequencies spanning 0.6–3.8 MHz, and evaluate stray electric field across multiple trapping sites. We measure motional heating rates over an extensive range of trap frequencies, and temperatures, observing 40 phonons/s at 1 MHz and 185 K. This fabrication method provides a highly scalable approach for producing a new generation of 3D ion traps.

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Section: Measuring Stray Static Electric Fieldsmentioning

confidence: 53%

Industrially microfabricated ion trap with 1 eV trap depth

Auchter

Axline

Decaroli

et al. 2022

Quantum Sci. Technol.

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show abstract

“…During loading, neutral calcium also travels along the direction indicated by the white arrow in Figure 4a, and can deposit on trap surfaces including the sides of spacers 1 and 3. Adsorbate build-up has been shown to alter stray fields [56,70]. However, we observe that the field remains stable during trap operation, and we do not observe significant stray field drift in the seconds or hours after loading (resolvable by tracking the ion's position on a camera).…”

Section: Measuring Stray Static Electric Fieldsmentioning

confidence: 53%

Industrially Microfabricated Ion Trap with 1 eV Trap Depth

Auchter¹,

Axline²,

Decaroli³

et al. 2022

Preprint

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Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric three-dimensional (3D) structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on stacked 8-inch wafers in a large-scale MEMS microfabrication process that provides reproducible traps at a large volume. Electrodes are patterned on the surfaces of two opposing wafers bonded to a spacer, forming a 3D structure with 2.5 µm standard deviation in alignment across the stack. We implement a design achieving a trap depth of 1 eV for a 40 Ca + ion held at 200 µm from either electrode plane. We characterize traps, achieving measurement agreement with simulations to within ±5% for mode frequencies spanning 0.6-3.8 MHz, and evaluate stray electric field across multiple trapping sites. We measure motional heating rates over an extensive range of trap frequencies, and temperatures, observing 40 phonons/s at 1 MHz and 185 K. This fabrication method provides a highly scalable approach for producing a new generation of 3D ion traps.

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“…The previous expression becomes the electrostatic analog of the magnetostatic problem in (1). The GSE serves as an ideal model of the gaped Surfaces Electrodes (SE), which are built technologies of Surface Electrodes 5 [14][15][16][17][18][19][20][21][22][23]. Indeed, a growing interest has arisen in the design of SE arrays for the construction of ion traps.…”

Section: Introductionmentioning

confidence: 99%

Expansion formula for the magnetic field of a periodically deformed circular current loop

Salazar¹,

Téllez²,

Bayona-Roa³

2021

Phys. Scr.

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A method is derived to obtain an expansion formula for the magnetic field B(r) generated by a closed planar wire carrying a steady electric current. The parametric equation of the loop is R(φ) = R + Hf (φ), with R the radius of the circle, H ∈ [0, R) the radial deformation amplitude, and f (φ) ∈ [−1, 1] a periodic function. The method is based on the replacement of the 1 r − r ′ 3 factor by an infinite series in terms of Gegenbauer polynomials, as well as the use of the Taylor series. This approach makes it feasible to write B(r) as the circular loop magnetic field contribution plus a sum of powers of H R. Analytic formulas for the magnetic field are obtained from truncated finite expansions outside the neighborhood of the wire. These showed to be computationally less expensive than numerical integration in regions where the dipole approximation is not enough to describe the field properly. Illustrative examples of the magnetic field due to circular wires deformed harmonically are developed in the article, obtaining exact expansion coefficients and accurate descriptions. Error estimates are calculated to identify the regions in R 3 where the analytical expansions perform well. Finally, first-order deformation formulas for the magnetic field are studied for generic even deformation functions f (φ).

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Convenient Real-Time Monitoring of the Contamination of Surface Ion Trap

Cited by 4 publications

References 23 publications

Industrially microfabricated ion trap with 1 eV trap depth

Industrially microfabricated ion trap with 1 eV trap depth

Industrially Microfabricated Ion Trap with 1 eV Trap Depth

Expansion formula for the magnetic field of a periodically deformed circular current loop

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