Controlling the optical constants of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver

Márquez, E.; Wágner, T.; González-Leal, J.M.; Bernal-Oliva, A.M.; Prieto-Alcón, R.; Jiménez‐Garay, R.; Ewen, Peter

doi:10.1016/s0022-3093(00)00184-8

Cited by 63 publications

(34 citation statements)

References 17 publications

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“…Chalcogenide glasses have received a great deal of attention for the last two decades due to their technological applications, namely electronic, optoelectronic, optical and memory switching devices, guided wave devices and infrared telecommunication systems [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

et al. 2011

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The ac conductivity and dielectric properties of Ge 15 Se 60 X 25 (X = As or Sn) thin films are reported in this paper. The thin films were deposited by thermal evaporation at 10 −5 Torr pressure. The films were well characterized by X-ray diffraction, differential thermal analysis and energy dispersive X-ray spectroscopy. The ac conductivity was measured over temperature range 303-413 K and frequency range 10 2 -10 5 Hz. The frequency dependence of the ac conductivity was found to be linear with slope which lies very close to unity and is independent of temperature. This behavior can be explained in terms of the correlated barrier hopping between centers forming intimate valence alternation pairs. Values of the dielectric constant ε 1 were found to decrease with frequency and increase with temperature. The maximum barrier height W m for each sample, which was calculated from the dielectric measurements according to the Guinitin equation, agrees with the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized state near the Fermi level was estimated for the studied films.

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Section: Introductionmentioning

confidence: 99%

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

et al. 2011

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“…As these glasses have poor thermomechanical properties, in order to enlarge their domain of applications, it is necessary to increase their softening temperature and mechanical strength. The addition of a third element (In) which has a large electro-negativity difference with Se and Te, expands the glass forming area and also creates compositional and configurational disorder in the system, and also is found to modify the structure and thus the electrical and thermal properties of the Se-Te system [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Glass transition and crystallization kinetics of Inx(Se0.75Te0.25)100−x chalcogenide glasses

Elnaeim¹,

Aly²,

Afify³

et al. 2010

Journal of Alloys and Compounds

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“…According to Ref. [26], the above-mentioned basic law and Eq. 2 are not valid at the interference maxima and minima, but they are valid at the tangent points referred to previously [18].…”

Section: Determination Of the Film Thicknessmentioning

confidence: 99%

“…5. This figure describes the relationship of the refractive index versus the wavelength, in a range of 440-540 nm, over all the working temperatures investigated here.In view of the single-effective oscillator suggested by Wemple and DiDomenico [44,45], it has reported in Ref [26] that the data on the dispersion of the refractive index were investigated based on the WDD model for more than a hundred different materials, both covalent and ionic, crystalline and amorphous. They also reported that the data could be described via an excellent approximation using the following formula:…”

Section: Determination Of the Optical Parametersmentioning

confidence: 99%

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

Badr

Ramadan

Thorrya

2011

J Mater Sci: Mater Electron

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Chalcogenide amorphous thin films of the modification (As 2 S 3 ) 0.95 Cu 0.05 were prepared using a thermal evaporation technique. The optical properties of the resultant films were investigated based on the transmittance spectra in the photon energy range 1.6-2.82 eV. Thicknesses of the films under study were determined using the envelope technique based on the transmittance spectra. The optical measurements were carried out over the conditional temperature extending from 77 to 300 K. The results of the mentioned measurements are conductive tools in investigating the electronic structures of the Chalcogenide Glasses, however the analysis of the experimental results provide information about the optical gap width and elucidate the broadness of the band tail that may disturb the band gap edges. Moreover, the single-effective oscillator was implemented in calculating both the oscillation and dispersion energies of the films under investigation. The static refractive index and the static dielectric constant were also determined for these films.

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Controlling the optical constants of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver

Cited by 63 publications

References 17 publications

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

Glass transition and crystallization kinetics of Inx(Se0.75Te0.25)100−x chalcogenide glasses

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

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Controlling the optical constants of thermally-evaporated Ge10Sb30S60 chalcogenide glass films by photodoping with silver

Cited by 63 publications

References 17 publications

Ac Conductivity and Dielectric Properties of Amorphous Ge15Se60X25( X = As or Sn) Films

Ac Conductivity and Dielectric Properties of Amorphous Ge15Se60X25( X = As or Sn) Films

Glass transition and crystallization kinetics of Inx(Se0.75Te0.25)100−x chalcogenide glasses

Spectral optoelectronic features of Cu-containing arsenic sulfide (As2S3)0.95Cu0.05

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Product

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Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films

Ac Conductivity and Dielectric Properties of Amorphous Ge₁₅Se₆₀X₂₅( X = As or Sn) Films