Controlling the morphology of CVD films

Viljoen, Hendrik J.; Thiart, Jacob J.; Hlaváček, Vladimír

doi:10.1002/aic.690400614

Cited by 15 publications

(15 citation statements)

References 33 publications

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“…In a previous study (Viljoen et al, 1994;Thiart et al, 1994) we presented a continuum model for evolution of the gas-solid interface during typical atmospheric pressure CVD processes. Concentration of reactant in the gas phase and the interface shape were solved in Cartesian coordinates by successive solution at each instant in time.…”

Section: Introductionmentioning

confidence: 99%

Analysis of interface evolution and pattern formation during CVD

Thiart

Hlaváček

1995

AIChE Journal

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Section: Introductionmentioning

confidence: 99%

Analysis of interface evolution and pattern formation during CVD

Thiart

Hlaváček

1995

AIChE Journal

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“…Usually models of CVD growth [6][7][8][9][10][11] predict that the CVD film interface becomes unstable for gas diffusion controlled growth conditions. These models are purely theoretical approaches to CVD growth dynamics.…”

Section: Theoretical Conceptsmentioning

confidence: 99%

Modelling of silica film growth by chemical vapour deposition : Influence of the interface properties

et al. 2001

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We have studied the main physical mechanisms involved in the growth of Chemical Vapor Deposition (CVD) systems. We have characterized W films by Scanning Tunneling Microscopy, and Si0 2 films by Atomic Force Microscopy (AFM) and Infrared and Raman spectroscopies. Tungsten CVD films display an unstable growth mode since the surface roughness increases continuously with deposition time. In order to assess the physical origin of the instability we have grown silica films in a low-pressure CVD reactor from SiH,J02 mixtures at 0.3 nmls at low (611 K) and high (723 K) temperatures. Silica films deposited at high temperature are rougher than those grown at low temperature. Moreover, they become asymptotically stable in contrast to those deposited at low temperature which are unstable. These different behaviors are explained within the framework of the dynamic scaling theory by the interplay for each growth condition between surface diffusion relaxation processes, shadowing effects, lateral growth, short-range memory effects and the relative concentration of active sites, mainly SiH and strained siloxane groups, and passive sites. A continuum growth equation taking into account these effects is proposed to explain the observed growth behavior for both sets of films. Computer simulations of this equation reproduce the experimental behavior.

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“…Thus, several models of CVD have been proposed in relation to the interface growth dynamics that include destabilizing and stabilizing factors. [4][5][6][7] The predictions of these models have been difficult to check due to the lack of systematic experimental results in the evolution of CVD films, specially on the nanometer/micrometer scale where typical morphological instabilities occur. [4] The interface evolution can be followed by means of the dynamic scaling theory applied to surface profiles on different time scales.…”

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confidence: 99%