Abstract:We have studied the main physical mechanisms involved in the growth of Chemical Vapor Deposition (CVD) systems. We have characterized W films by Scanning Tunneling Microscopy, and Si0 2 films by Atomic Force Microscopy (AFM) and Infrared and Raman spectroscopies. Tungsten CVD films display an unstable growth mode since the surface roughness increases continuously with deposition time. In order to assess the physical origin of the instability we have grown silica films in a low-pressure CVD reactor from SiH,J02… Show more
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