Controlling the growth of epitaxial graphene on metalized diamond (111) surface

Cooil, Simon; Wells, Justin W.; Hu, Di; Niu, Yuran; Zakharov, Alexei; Bianchi, Marco; Evans, D. Andrew

doi:10.1063/1.4935073

Cited by 11 publications

(19 citation statements)

References 33 publications

(36 reference statements)

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“…Additional spots (M) are also observed that likely originate from an underlying bcc(110) lattice constrained by the hexagonal 6H-SiC(0001) surface. Similar features have been reported for Fe thin films on hexagonal surfaces 37 , 38 and are removed at a later stage. 32 …”

Section: Resultssupporting

confidence: 83%

“…Within the Fe pattern (Region I) an asymmetric peak shape appears at a binding energy of 284.5 eV, characteristic for sp 2 bonded carbon. 34 , 35 Outside the pattern (Region II) a symmetric peak from the C–Si bonds in SiC appears at 1.1 eV lower binding energy. 8 The spatially resolved Raman and EF-PEEM thus demonstrate that graphene forms only within the metalized regions.…”

Section: Resultsmentioning

confidence: 99%

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A Simplified Method for Patterning Graphene on Dielectric Layers

Røst

Reed

Strand

et al. 2021

ACS Appl. Mater. Interfaces

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The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO 2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.

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Section: Resultssupporting

confidence: 83%

Section: Resultsmentioning

confidence: 99%

A Simplified Method for Patterning Graphene on Dielectric Layers

Røst

Reed

Strand

et al. 2021

ACS Appl. Mater. Interfaces

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show abstract

“…Ordered GN films have been grown on Fe-treated diamond and silicon carbide (SiC) surfaces; this method enabled the epitaxial growth of GN on the diamond for the first time. Also, the GN films formed only on the catalyst-treated regions, enabling patterning the GN on diamond (and SiC) at temperatures reachable in industrial technologies [57,58].…”

Section: Experimental Demonstration and Growth Mechanismmentioning

confidence: 99%

Mixed sp2–sp3 Nanocarbon Materials: A Status Quo Review

Vejpravová

2021

Nanomaterials

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Carbon nanomaterials with a different character of the chemical bond—graphene (sp2) and nanodiamond (sp3)—are the building bricks for a new class of all-carbon hybrid nanomaterials, where the two different carbon networks with sp3 and sp2 hybridization coexist, interacting and even transforming into one another. The extraordinary physiochemical properties defined by the unique electronic band structure of the two border nanoallotropes ensure the immense application potential and versatility of these all-carbon nanomaterials. The review summarizes the status quo of sp2 – sp3 nanomaterials, including graphene/graphene-oxide—nanodiamond composites and hybrids, graphene/graphene-oxide—diamond heterojunctions, and other sp2–sp3 nanocarbon hybrids for sensing, electronic, and other emergent applications. Novel sp2–sp3 transitional nanocarbon phases and architectures are also discussed. Furthermore, the two-way sp2 (graphene) to sp3 (diamond surface and nanodiamond) transformations at the nanoscale, essential for innovative fabrication, and stability and chemical reactivity assessment are discussed based on extensive theoretical, computational and experimental studies.

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“…Surface graphene layers are formed by allowing the thermally activated metal films to convert sp 3 carbon from the substrate into sp 2 carbon, which reforms at the surface. A similar method has previously been successfully demonstrated at temperatures 500-600 °C using Fe on both SiC and diamond 19,20 . Here, we show that ordered graphene layers can be produced from SiC using either Fe or Ru, with an onset of growth starting at around 450-500 °C.…”

Section: Introductionmentioning

confidence: 94%

Low Temperature Growth of Graphene on Semiconductor

Røst,

Chellappan,

Strand

et al. 2020

Preprint

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The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around 450-500 °C. From the chemical reaction between SiC and thin films of Fe or Ru, sp 3 carbon is liberated from the SiC crystal and converted to sp 2 carbon at the surface. The quality of the graphene is demonstrated using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate is verified using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene based device structures.

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Controlling the growth of epitaxial graphene on metalized diamond (111) surface

Cited by 11 publications

References 33 publications

A Simplified Method for Patterning Graphene on Dielectric Layers

A Simplified Method for Patterning Graphene on Dielectric Layers

Mixed sp2–sp3 Nanocarbon Materials: A Status Quo Review

Low Temperature Growth of Graphene on Semiconductor

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