Abstract:The large-scale formation
of patterned, quasi-freestanding graphene
structures supported on a dielectric has so far been limited by the
need to transfer the graphene onto a suitable substrate and contamination
from the associated processing steps. We report μm scale, few-layer
graphene structures formed at moderate temperatures (600–700
°C) and supported directly on an interfacial dielectric formed
by oxidizing Si layers at the graphene/substrate interface. We show
that the thickness of this underlying dielect… Show more
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