Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field

Zhang, Xin; Zhou, Yuan; Hu, Rui-Zi; Ma, Rong-Long; Ni, Ming; Wang, Ke; Luo, Gang; Cao, Gang; Wang, Guilei; Huang, Peihao; Hu, Xuedong; Jiang, Hong-Wen; Li, Haiou; Guo, Guang‐Can

doi:10.1103/physrevapplied.15.044042

Cited by 18 publications

(8 citation statements)

References 54 publications

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“…The primary system with the Kondo resonance can resort to semiconductor QD [9] or organic radical molecule junctions [34,66]. The local magnetic field can be generated by a delicately designed micromagnet [67], such as a Ti/Co micromagnet [68], and deposited next to the Kondo device. Usually, many fabricated devices are necessary in practice and the applied weak magnetic field is fixed during the measurement on one device.…”

Section: Discussion and Summarymentioning

confidence: 99%

The Kondo scaling for spin thermocurrent in strongly correlated electron systems

Li,

Zeng,

Cheng

et al. 2024

New J. Phys.

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One of the most important feature in the Kondo physics is the universal scaling behavior. In this study, we analyze the transport behavior of the spin thermocurrent driven by a small temperature bias and under a weak magnetic field. We conclude that the spin thermocurrent exhibits a universal scaling behavior, similar to the spin susceptibility. The validity of our conclusion is also checked by using the numerically exact hierarchical equations of motion approach. From our fitting result of the scaling function, it is found that the Kondo temperature can be determined by the maximum of the spin thermocurrent at T/TK = 0.383.

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Section: Discussion and Summarymentioning

confidence: 99%

The Kondo scaling for spin thermocurrent in strongly correlated electron systems

Li,

Zeng,

Cheng

et al. 2024

New J. Phys.

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“…In the model, we neglect the excited orbital states by assuming that they are high in energy than the spin splittings and do not modify the qualitative behavior of the spin dynamics. For example, in silicon, there are six valley states of electrons due to the six-fold degeneracy of the conduction band [97,98,137,100,138,139,140,141,142,143,144,145,146,147,148,149,150].…”

Section: Model Hamiltonianmentioning

confidence: 99%

“…Electric fields are not interacting with spin qubits directly. However, they affect spin qubits indirectly via the exchange interaction or the SOC [46,99,100,189,204,50,205,148,190,191,206,207,149,150]. In the following, we focus on the spin decoherence due to charge noise through the exchange interaction, which is the most important in a two-spin system in a DQD.…”

Section: Noise In the Systemmentioning

confidence: 99%

Dephasing of Exchange-coupled Spins in Quantum Dots for Quantum Computing

Huang¹

2021

Preprint

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A spin qubit in semiconductor quantum dots holds promise for quantum information processing for scalability and long coherence time. An important semiconductor qubit system is a double quantum dot trapping two electrons or holes, whose spin states encode either a singlet-triplet qubit or two single-spin qubits coupled by exchange interaction. In this article, we report progress on spin dephasing of two exchange-coupled spins in a double quantum dot. We first discuss the schemes of two-qubit gates and qubit encodings in gate-defined quantum dots or donor atoms based on the exchange interaction. Then, we report the progress on spin dephasing of a singlet-triplet qubit or a two-qubit gate. The methods of suppressing spin dephasing are further discussed. The understanding of spin dephasing may provide insights into the realization of high-fidelity quantum gates for spin-based quantum computing.

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“…Among the different modules, the development of superconducting resonators integrated in the post-CMOS process has proven to be successful in the coupling of photon with spin qubits [9]. Following the same principle, fabrication of magnetic materials for electric-dipole spin resonance (EDSR) [10][11][12][13][14][15] could also be integrated in the BEOL.…”

Section: Introductionmentioning

confidence: 99%

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Klemt¹,

El-Homsy²,

Nurizzo³

et al. 2023

Preprint

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For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundrycompatible process flow. Here, we study a single electron spin qubit in a CMOS device with a micromagnet integrated in the flexible BEOL. We exploit the synthetic spin orbit coupling (SOC) to control the qubit via electric field and we investigate the spin-valley physics in the presence of SOC where we show an enhancement of the Rabi frequency at the spin-valley hotspot. Finally, we probe the high frequency noise in the system using dynamical decoupling pulse sequences and demonstrate that charge noise dominates the qubit decoherence in this range.

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Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field

Cited by 18 publications

References 54 publications

The Kondo scaling for spin thermocurrent in strongly correlated electron systems

The Kondo scaling for spin thermocurrent in strongly correlated electron systems

Dephasing of Exchange-coupled Spins in Quantum Dots for Quantum Computing

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

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