Controlling spin-orbit coupling strength of bulk transition metal dichalcogenide semiconductors

Proximity-Induced Tunable Magnetic Order at the Interface of All-van der Waals-Layered Heterostructures

“…The H C of FM is much smaller than H C of IEC I (left panel) due to the magnetic exchange coupling between FM (FGT) and AFM (o-FGT). , In contrast with FGT, the IEC I region in FGT/W 0.95 V 0.05 WSe 2 disappears at relatively low temperature below 70 K due to strengthened FM order in the FGT region by strong SOC in W 0.95 V 0.05 WSe 2 , indicating a predominant SOC-proximity effect. The IEC I region in FGT/WSe 2 is further shrunken by stronger SOC than o-FGT and W 0.95 V 0.05 WSe 2 . − …”

“…This suggests that the magnetic reversal of FGT/W 1– x V x Se 2 occurs through spin-flip transition (abrupt change of magnetization), whereas FGT displays a spin-flop transition (continuous rotation of magnetization) (Figure d) . The distinct switching by the spin-flip (flop) transition can be ascribed to the adjacent materials with different SOCs, such as o-FGT (relatively weak SOC), W 0.95 V 0.05 Se 2 (relatively strong SOC), and WSe 2 (relatively strong SOC). − …”

“…In this study, we demonstrate the SOC-proximity-induced tunable magnetic order in all-van der Waals-layered heterostructures using the metallic ferromagnet FGT with relatively weak SOC and monolayer W 1– x V x Se 2 ( x = 0 and 0.05) with strong SOC. − FGT has recently attracted attention because of its tunable magnetic properties through gating, electrical current, and the magnetic proximity effect. ,, The magnetic properties of FGT including T C and coercivity are sensitive to small variations in the chemical composition, thickness, and oxidation. ,,, Manipulation of spin textures via spin currents, for example, magnetic skyrmions, has been reported in FGT. , Van der Waals (vdW)-layered transition metal dichalcogenide (TMD) materials, such as WSe 2 , WTe 2 , and MoTe 2 , are good candidates for strong SOC material due to their heavy elements. − Particularly, vdW 2D TMDs have been widely used for layered heterostructures, which offer ultraclean interfaces minimizing undesired interfacial disorders. − Semiconducting WSe 2 is an applicable candidate to study the SOC-proximity effect on magnetic ordering due to easy control of SOC strength through light element substitution including the Mo atom . It has been recently reported that vanadium atoms are well distributed in WSe 2 without being aggregated, even with a high doping concentration up to about 10%. , Additionally, low V-doping induces magnetic ordering in WSe 2 . , This suggests that W 1– x V x Se 2 can provide additional magnetism to the proximitized material.…”

“…37−39 Semiconducting WSe 2 is an applicable candidate to study the SOC-proximity effect on magnetic ordering due to easy control of SOC strength through light element substitution including the Mo atom. 26 It has been recently reported that vanadium atoms are well distributed in WSe 2 without being aggregated, even with a high doping concentration up to about 10%. 40,41 Additionally, low Vdoping induces magnetic ordering in WSe 2 .…”

Spin direction dependent quantum anomalous Hall effect in two-dimensional ferromagnetic materials

“…Even in the case of in-plane magnetization, QAHE can be realized when SOC strength is large enough, and the SOC strength of a single layer can be regulated by doping different concentrations of Pt, Sb, Bi, and other metal atoms. [60][61][62][63][64] The band structure of Bi atom doping can be seen in part VII of the ESI. In particular, both systems could exhibit an intrinsic QAH effect even with a high Curie temperature of 768.7 K. When forming a PbN 2 /Ga 2 Se 2 heterostructure, the magnetization can alter within IP and OP directions.…”